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Publication Information

Title: Plasma enhanced atomic layer deposition of SiNx:H and SiO2

Type: Journal

Info: Journal of Vacuum Science & Technology A 29, 041501 (2011)

Date: 2011-04-02

DOI: http://dx.doi.org/10.1116/1.3584790

Author Information

Name

Institution

Intel Corporation

Films

Plasma SiNx using Unknown

Deposition Temperature Range = 250-400C

7803-62-5

7727-37-9

Plasma SiO2 using Unknown

Deposition Temperature Range = 250-400C

7803-62-5

124-38-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam VASE

Refractive Index

Ellipsometry

J.A. Woollam VASE

Film Stress

Wafer Curvature

Unknown

Dielectric Constant, Permittivity

Mercury Probe

Unknown

Density

XRR, X-Ray Reflectivity

Bede Fab200 Plus

Density

XRR, X-Ray Reflectivity

Siemens D5000

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Nicolet Magna-IR 860

Chemical Composition, Impurities

FTIR, Fourier Transform InfraRed spectroscopy

Bio-Rad QS-3300

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Substrates

Si(100)

Keywords

Notes

693


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