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Initial and steady-state Ru growth by atomic layer deposition studied by in situ Angle Resolved X-ray Photoelectron Spectroscopy
Innovative remote plasma source for atomic layer deposition for GaN devices
Influence of plasma species on the early-stage growth kinetics of epitaxial InN grown by plasma-enhanced atomic layer deposition
Optical in situ monitoring of plasma-enhanced atomic layer deposition process
The role of active species in the N2 and N2-H2 RF afterglows on selective surface nitriding of ALD-grown TiO2 films
Spontaneous Formation of Vertical Magnetic-Metal-Nanorod Arrays During Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
Small 2008, 4, No. 12, 2247-2254
Date:
2008-10-30
Author Information
| Name | Institution |
|---|---|
| Han-Bo-Ram Lee | Pohang University of Science and Technology (POSTECH) |
| Gil-Ho Gu | Pohang University of Science and Technology (POSTECH) |
| J. Y. Son | Pohang University of Science and Technology (POSTECH) |
| Chan Gyung Park | Pohang University of Science and Technology (POSTECH) |
| Hyungjun Kim | Pohang University of Science and Technology (POSTECH) |
Films
Plasma Co
Plasma Ni
Film/Plasma Properties
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Chemical Composition, Impurities
Analysis: ELS, EELS, Electron Energy Loss Spectroscopy
Characteristic: Chemical Composition, Impurities
Analysis: EDS, EDX, Energy Dispersive X-ray Spectroscopy
Characteristic: Magnetic Properties
Analysis: SQUID, Superconducting Quantum Interference Device
Substrates
| Si(001) |
| SiO2 |
Keywords
Notes
| 1017 |