
Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Journal of Crystal Growth 312 (2010) 2215-2219
Date:
2010-04-23
Author Information
Name | Institution |
---|---|
Han-Bo-Ram Lee | Yonsei University |
Hyungjun Kim | Yonsei University |
Films
Plasma CoSi2
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Areal Density
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Substrates
Si(001) |
CoSi2 |
Keywords
Notes
1680 |