Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Crystal Growth 312 (2010) 2215-2219
Date:
2010-04-23

Author Information

Name Institution
Han-Bo-Ram LeeYonsei University
Hyungjun KimYonsei University

Films



Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Areal Density
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Substrates

Si(001)
CoSi2

Notes

1680