Self-formation of dielectric layer containing CoSi2 nanocrystals by plasma-enhanced atomic layer deposition

Type:
Journal
Info:
Journal of Crystal Growth 312 (2010) 2215-2219
Date:
2010-04-23
DOI:
https://doi.org/10.1016/j.jcrysgro.2010.04.048

Author Information

Name Institution
Han-Bo-Ram LeeYonsei University
Hyungjun KimYonsei University

Films

Plasma CoSi2

Hardware used: Custom Remote Inductively Coupled Plasma
cobaltacene, bis(cyclopentadienyl)cobalt, Cp2Co
CAS#: 1277-43-6
Where to buy precursor
SiH4, Silane
CAS#: 7803-62-5
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 300C

Plasma HfO2

Hardware used: Unknown
TDMAHf, tetrakis(dimethylamido)hafnium, hafnium dimethylamide, (Me2N)4Hf, also CAS# 19782-68-4
CAS#: 19962-11-9
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Diagnostic: Synchrotron

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: HP 4284A LCR

Characteristic: Areal Density
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

Si(001)
CoSi2

Keywords

Notes

1680