Publication Information

Title:
Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
Type:
Journal
Info:
Electrochemical and Solid-State Letters, 7 (8) C87-C89 (2004)
Date:
2004-07-12

Author Information

Name Institution
Jin-Seong ParkKorea Advanced Institute of Science and Technology
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma TiSiN


Plasma TiN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Diffusion Barrier Properties
Analysis: -

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

45