Publication Information

Title: Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma

Type: Journal

Info: Electrochemical and Solid-State Letters, 7 (8) C87-C89 (2004)

Date: 2004-07-12

DOI: http://dx.doi.org/10.1149/1.1764413

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Films

Plasma TiSiN using Custom

Deposition Temperature = 350C

7550-45-0

7803-62-5

7727-37-9

1333-74-0

Plasma TiN using Custom

Deposition Temperature = 350C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Profilometry

Tencor Instruments 200

Resistivity, Sheet Resistance

Four-point Probe

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Bonding States

XPS, X-ray Photoelectron Spectroscopy

-

Diffusion Barrier Properties

-

-

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

45



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