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Publication Information

Title: Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma

Type: Journal

Info: Electrochemical and Solid-State Letters, 7 (8) C87-C89 (2004)

Date: 2004-07-12

DOI: http://dx.doi.org/10.1149/1.1764413

Author Information

Name

Institution

Korea Advanced Institute of Science and Technology

Korea Advanced Institute of Science and Technology

Films

Plasma TiSiN using Custom

Deposition Temperature = 350C

7550-45-0

7803-62-5

7727-37-9

1333-74-0

Plasma TiN using Custom

Deposition Temperature = 350C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Profilometry

Tencor Instruments 200

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

TEM, Transmission Electron Microscope

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Bonding States

XPS, X-ray Photoelectron Spectroscopy

Unknown

Diffusion Barrier Properties

Unknown

Unknown

Substrates

SiO2

Keywords

Diffusion Barrier

Notes

45

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