Jin-Seong Park Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications authored by Jin-Seong Park returned 24 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
2Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application
3Plasma-Enhanced Atomic Layer Deposition of Ta-N Thin Films
4Low temperature SiOx thin film deposited by plasma enhanced atomic layer deposition for thin film encapsulation applications
5Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process
6Investigating the interface characteristics of high-k ZrO2/SiO2 stacked gate insulator grown by plasma-enhanced atomic layer deposition for improving the performance of InSnZnO thin film transistors
7Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
8Characteristics of Plasma-Enhanced Atomic-Layer Deposited (PEALD) SnO2 Thin Films
9Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition
10Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma
11Growth of tantalum nitride film as a Cu diffusion barrier by plasma-enhanced atomic layer deposition from bis((2-(dimethylamino)ethyl)(methyl)amido)methyl(tert-butylimido)tantalum complex
12Chemistry of SiNx thin film deposited by plasma-enhanced atomic layer deposition using di-isopropylaminosilane (DIPAS) and N2 plasma
13Plasma-enhanced atomic layer deposited indium oxide film using a novel dimethylbutylamino-trimethylindium precursor for thin film transistors
14Effect of process parameters on surface morphology and characterization of PE-ALD SnO2 thin films for gas sensing
15Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films
16The Effects of UV Exposure on Plasma-Enhanced Atomic Layer Deposition ZnO Thin Film Transistor
17A Chemical Reaction Path Design for the Atomic Layer Deposition of Tantalum Nitride Thin Films
18Compositional and electrical modulation of niobium oxide thin films deposited by plasma-enhanced atomic layer deposition
19Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma
20Surface and sensing properties of PE-ALD SnO2 thin film
21Enhancement of the TiO2 Thin-Film Dielectric Constant Through Pretreatment of Ir Substrate
22A study on the growth mechanism and gas diffusion barrier property of homogeneously mixed silicon-tin oxide by atomic layer deposition
23Plasma-Enhanced Atomic Layer Deposition of Tantalum Nitrides Using Hydrogen Radicals as a Reducing Agent
24Plasma enhanced atomic layer deposited silicon dioxide with divalent Si precursor [N,N'-tert-butyl-1,1-dimethylethylenediamine silylene]