Improvement of Morphological Stability of PEALD-Iridium Thin Films by Adopting Two-Step Annealing Process

Type:
Journal
Info:
Electrochemical and Solid-State Letters, 11 (11) H303-H305 (2008)
Date:
2008-07-16
DOI:
http://dx.doi.org/10.1149/1.2973336

Author Information

Name Institution
Sung-Wook KimKorea Advanced Institute of Science and Technology
Se-Hun KwonKorea Advanced Institute of Science and Technology
Seong-Jun JeongKorea Advanced Institute of Science and Technology
Jin-Seong ParkSamsung SDI Center Research and Development
Sang-Won KangKorea Advanced Institute of Science and Technology

Films

Plasma Ir

Hardware used: Custom Direct Capacitively Coupled Plasma
(ethylcyclopentadienyl) (1, 5-cyclooctodiene) Iridium, Ir(EtCp)(COD)
CAS#: 0-0-0
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 270C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: -

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: -

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Substrates

TiN

Notes

1341