Publication Information

Title:
Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
Type:
Journal
Info:
J. Nanosci. Nanotechnol. 2011, Vol. 11, No. 1, p.671-674.
Date:
2011-01-01

Author Information

Name Institution
Seong-Jun JeongKorea Advanced Institute of Science and Technology
Doo-In KimPusan National University
Sang Ouk KimKorea Advanced Institute of Science and Technology
Jung-Dae KwonKorea Institute of Materials Science
Jin-Seong ParkDankook University
Se-Hun KwonPusan National University

Films


Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Microstructure
Analysis: XRD, X-Ray Diffraction

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Barrier Characteristics
Analysis: Four-point Probe

Characteristic: Barrier Characteristics
Analysis: XRD, X-Ray Diffraction

Substrates

SiO2

Keywords

Notes

Ru deposition used N2/H2 plasma while TiN deposition used only N2 plasma.
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