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Publication Information

Title: Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 57, No. 4, pp. 806--811

Date: 2010-07-29

DOI: https://inis.iaea.org/search/search.aspx?orig_q=RN:44096233

Author Information

Name

Institution

Korea Institute of Materials Science

Dankook University

Films

Deposition Temperature Range = 150-350C

7550-45-0

1333-74-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Thickness

Profilometry

Tencor Instruments 200

Density

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Substrates

SiO2

Keywords

Notes

725


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