
Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 57, No. 4, pp. 806--811
Date:
2010-07-29
Author Information
Name | Institution |
---|---|
Jung-Dae Kwon | Korea Institute of Materials Science |
Jin-Seong Park | Dankook University |
Films
Plasma TiN
Film/Plasma Properties
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy
Substrates
SiO2 |
Notes
725 |