Publication Information

Title:
Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals
Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 57, No. 4, pp. 806--811
Date:
2010-07-29

Author Information

Name Institution
Jung-Dae KwonKorea Institute of Materials Science
Jin-Seong ParkDankook University

Films

Plasma TiN


Film/Plasma Properties

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Substrates

SiO2

Keywords

Notes

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