Publication Information

Title: Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 57, No. 4, pp. 806--811

Date: 2010-07-29

DOI: https://inis.iaea.org/search/search.aspx?orig_q=RN:44096233

Author Information

Name

Institution

Korea Institute of Materials Science

Dankook University

Films

Deposition Temperature Range = 150-350C

7550-45-0

1333-74-0

7727-37-9

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Resistivity, Sheet Resistance

Four-point Probe

-

Thickness

Profilometry

Tencor Instruments 200

Density

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

-

Substrates

SiO2

Keywords

Notes

725



Shortcuts



© 2014-2020 plasma-ald.com