TiCl4, Titanium Tetrachloride, CAS# 7550-45-0
Informational Websites
Where to buy
| Number | Vendor | Region | Link |
|---|
| 1 | Sigma-Aldrich, Co. LLC | 🇺🇸 | Titanium(IV) chloride |
| 2 | Strem Chemicals, Inc. | 🇺🇸 | Titanium(IV) chloride, 99% |
| 3 | Strem Chemicals, Inc. | 🇺🇸 | Titanium(IV) chloride, 99%, contained in 50 ml cylinder for CVD/ALD |
| 4 | Gelest | 🇺🇸 | Titanium Tetrachloride, 99% |
| 5 | Pegasus Chemicals | 🇬🇧 | Titanium(IV)chloride |
| 6 | Strem Chemicals, Inc. | 🇺🇸 | Titanium(IV) chloride, (99.99+%-Ti) PURATREM |
| 7 | Alfa Aesar | 🇺🇸 | Titanium(IV) chloride, 99.99% (metals basis) |
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Plasma Enhanced Atomic Layer Deposition Film Publications
Your search for publications using this chemistry returned 79 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
| Number | Title |
|---|
| 1 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 2 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 3 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
| 4 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 5 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 6 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 7 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 8 | Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal |
| 9 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 10 | Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si |
| 11 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 12 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 13 | Film Uniformity in Atomic Layer Deposition |
| 14 | Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance |
| 15 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 16 | Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride |
| 17 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 18 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 19 | Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films |
| 20 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
| 21 | Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition |
| 22 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
| 23 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 24 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 25 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
| 26 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
| 27 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 28 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
| 29 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
| 30 | Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization |
| 31 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
| 32 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
| 33 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 34 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 35 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 36 | NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors |
| 37 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 38 | Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition |
| 39 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 40 | Microwave properties of superconducting atomic-layer deposited TiN films |
| 41 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 42 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 43 | Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support |
| 44 | Nitride memristors |
| 45 | Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy |
| 46 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 47 | Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification |
| 48 | Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating |
| 49 | Fabrication and deformation of three-dimensional hollow ceramic nanostructures |
| 50 | Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films |
| 51 | Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition |
| 52 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 53 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 54 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 55 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 56 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 57 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 58 | Silicon nanowire networks for multi-stage thermoelectric modules |
| 59 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
| 60 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 61 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 62 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 63 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
| 64 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 65 | The α and γ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
| 66 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 67 | Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition |
| 68 | Fundamental beam studies of radical enhanced atomic layer deposition of TiN |
| 69 | New materials for memristive switching |
| 70 | Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition |
| 71 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 72 | Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers |
| 73 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 74 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
| 75 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 76 | Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy |
| 77 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 78 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 79 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |