TiCl4, Titanium Tetrachloride, CAS# 7550-45-0
Informational Websites
Where to buy
| Number | Vendor | Region | Link |
|---|
| 1 | Strem Chemicals, Inc. | πΊπΈ | Titanium(IV) chloride, 99%, contained in 50 ml cylinder for CVD/ALD |
| 2 | EpiValence | π¬π§ | Titanium chloride |
| 3 | Strem Chemicals, Inc. | πΊπΈ | Titanium(IV) chloride, 99% |
| 4 | Sigma-Aldrich, Co. LLC | πΊπΈ | Titanium(IV) chloride |
| 5 | Strem Chemicals, Inc. | πΊπΈ | Titanium(IV) chloride, (99.99+%-Ti) PURATREM |
| 6 | DOCK/CHEMICALS | π©πͺ | Titaniumtetrachloride |
| 7 | Pegasus Chemicals | π¬π§ | Titanium(IV)chloride |
| 8 | Alfa Aesar | πΊπΈ | Titanium(IV) chloride, 99.99% (metals basis) |
| 9 | Gelest | πΊπΈ | Titanium Tetrachloride, 99% |
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Plasma Enhanced Atomic Layer Deposition Film Publications
Your search for publications using this chemistry returned 79 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
| Number | Title |
|---|
| 1 | Plasma-assisted atomic layer deposition of TiN/Al2O3 stacks for metal-oxide-semiconductor capacitor applications |
| 2 | Investigating the TiN film quality and growth behavior for plasma-enhanced atomic layer deposition using TiCl4 and N2/H2/Ar radicals |
| 3 | Room temperature plasma enhanced atomic layer deposition for TiO2 and WO3 films |
| 4 | Band alignment of atomic layer deposited TiO2/multilayer MoS2 interface determined by x-ray photoelectron spectroscopy |
| 5 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 6 | Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode |
| 7 | Low Resistive Edge Contacts to CVD-Grown Graphene Using a CMOS Compatible Metal |
| 8 | Breakdown and Protection of ALD Moisture Barrier Thin Films |
| 9 | Synthesis and characterization of titanium silicon oxide thin films prepared by plasma enhanced atomic layer deposition |
| 10 | Silicon nanowire networks for multi-stage thermoelectric modules |
| 11 | Temperature control for the gate workfunction engineering of TiC film by atomic layer deposition |
| 12 | TiCl4 as a Precursor in the TiN Deposition by ALD and PEALD |
| 13 | Atomic layer deposition of TiN for the fabrication of nanomechanical resonators |
| 14 | Hot-Wire Generated Atomic Hydrogen and its Impact on Thermal ALD in TiCl4/NH3 System |
| 15 | Plasma-assisted atomic layer deposition of TiN films at low deposition temperature for high-aspect ratio applications |
| 16 | Conformal Formation of (GeTe2)(1-x)(Sb2Te3)x Layers by Atomic Layer Deposition for Nanoscale Phase Change Memories |
| 17 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 18 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 19 | Remote plasma-enhanced atomic layer deposition of metallic TiN films with low work function and high uniformity |
| 20 | Preparation of Lithium Containing Oxides by the Solid State Reaction of Atomic Layer Deposited Thin Films |
| 21 | TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition |
| 22 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 23 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 24 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 25 | The Ξ± and Ξ³ plasma modes in plasma-enhanced atomic layer deposition with O2-N2 capacitive discharges |
| 26 | Nitride memristors |
| 27 | Tribological properties of thin films made by atomic layer deposition sliding against silicon |
| 28 | Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers |
| 29 | Low-Temperature Deposition of TiN by Plasma-Assisted Atomic Layer Deposition |
| 30 | High rate roll to roll atomic layer deposition, and its application to moisture barriers on polymer films |
| 31 | In situ spectroscopic ellipsometry study on the growth of ultrathin TiN films by plasma-assisted atomic layer deposition |
| 32 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 33 | Reliability testing of high aspect ratio through silicon vias fabricated with atomic layer deposition barrier, seed layer and direct plating and material properties characterization of electrografted insulator, barrier and seed layer for 3-D integration |
| 34 | Strongly Disordered TiN and NbTiN s-Wave Superconductors Probed by Microwave Electrodynamics |
| 35 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 36 | Evaluation of Vapor Deposition Techniques for Membrane Pore Size Modification |
| 37 | Synaptic Plasticity and Learning Behaviors Mimicked in Single Inorganic Synapses of Pt/HfOx/ZnOx/TiN Memristive System |
| 38 | Effect of ion energies on the film properties of titanium dioxides synthesized via plasma enhanced atomic layer deposition |
| 39 | Residual chlorine in TiO2 films grown at low temperatures by plasma enhanced atomic layer deposition |
| 40 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 41 | Plasma-Enhanced ALD of Titanium-Silicon-Nitride Using TiCl4 , SiH4, and N2/H2/Ar Plasma |
| 42 | Comparison of chemical stability and corrosion resistance of group IV metal oxide films formed by thermal and plasma-enhanced atomic layer deposition |
| 43 | Growth mechanism and diffusion barrier property of plasma-enhanced atomic layer deposition Ti-Si-N thin films |
| 44 | Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma |
| 45 | Silicon nanowire lithium-ion battery anodes with ALD deposited TiN coatings demonstrate a major improvement in cycling performance |
| 46 | Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications |
| 47 | Investigation of residual chlorine in TiO2 films grown by Atomic Layer Deposition |
| 48 | Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films |
| 49 | Plasma-assisted atomic layer deposition of TiN monitored by in situ spectroscopic ellipsometry |
| 50 | Growth kinetics and initial stage growth during plasma-enhanced Ti atomic layer deposition |
| 51 | Controlling the composition of Ti1-xAlxN thin films by modifying the number of TiN and AlN subcycles in atomic layer deposition |
| 52 | In situ dry cleaning of Si wafer using OF2/NH3 remote plasma with low global warming potential |
| 53 | New materials for memristive switching |
| 54 | Optimization of Plasma Enhanced Atomic Layer Deposition Processes for Oxides, Nitrides and Metals in the Oxford Instruments FlexAL Reactor |
| 55 | Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks |
| 56 | Bipolar Resistive Switching Characteristics of HfO2/TiO2/HfO2 Trilayer-Structure RRAM Devices on Pt and TiN-Coated Substrates Fabricated by Atomic Layer Deposition |
| 57 | Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4 |
| 58 | Optical emission spectroscopy as a tool for studying, optimizing, and monitoring plasma-assisted atomic layer deposition processes |
| 59 | Ultrahigh purity conditions for nitride growth with low oxygen content by plasma-enhanced atomic layer deposition |
| 60 | Fundamental beam studies of radical enhanced atomic layer deposition of TiN |
| 61 | NiCO2O4@TiN Core-shell Electrodes through Conformal Atomic Layer Deposition for All-solid-state Supercapacitors |
| 62 | Microwave properties of superconducting atomic-layer deposited TiN films |
| 63 | Atomic Layer Deposition (ALD) grown thin films for ultra-fine pitch pixel detectors |
| 64 | Enhancing the Wettability of High Aspect-Ratio Through-Silicon Vias Lined With LPCVD Silicon Nitride or PE-ALD Titanium Nitride for Void-Free Bottom-Up Copper Electroplating |
| 65 | Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN |
| 66 | Antioxidation properties of Ti0.83Al0.17N prepared using plasma-enhanced atomic layer deposition |
| 67 | Radical Enhanced Atomic Layer Deposition of Metals and Oxides |
| 68 | Tailoring angular selectivity in SiO2 slanted columnar thin films using atomic layer deposition of titanium nitride |
| 69 | Atomic layer deposition of epitaxial layers of anatase on strontium titanate single crystals: Morphological and photoelectrochemical characterization |
| 70 | Fabrication and deformation of three-dimensional hollow ceramic nanostructures |
| 71 | Film Uniformity in Atomic Layer Deposition |
| 72 | Protective capping and surface passivation of III-V nanowires by atomic layer deposition |
| 73 | Ultrathin effective TiN protective films prepared by plasma-enhanced atomic layer deposition for high performance metallic bipolar plates of polymer electrolyte membrane fuel cells |
| 74 | Electrodynamic response and local tunneling spectroscopy of strongly disordered superconducting TiN films |
| 75 | Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si |
| 76 | Titanium Oxynitride Interlayer to Influence Oxygen Reduction Reaction Activity and Corrosion Stability of Pt and Pt-Ni Alloy |
| 77 | Titanium oxynitride films for surface passivation of crystalline silicon deposited by plasma-enhanced atomic layer deposition to improve electrical conductivity |
| 78 | Efficient Catalytic Microreactors with Atomic-Layer-Deposited Platinum Nanoparticles on Oxide Support |
| 79 | Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor |
