Relationships among growth mechanism, structure and morphology of PEALD TiO2 films: the influence of O2 plasma power, precursor chemistry and plasma exposure mode
Type:
Journal
Info:
Nanotechnology 27 (2016) 305701
Date:
2016-05-17
Author Information
Name | Institution |
---|---|
William Chiappim | Universidade do Vale do Paraíba (Univap) |
Giorgio E. Testoni | Universidade do Vale do Paraíba (Univap) |
A.C.O.C. Doria | Universidade do Vale do Paraíba (Univap) |
Rodrigo S. Pessoa | Universidade do Vale do Paraíba (Univap) |
Mariana A. Fraga | Instituto Nacional de Pesquisas Espaciais (INPE) |
N.K.A.M. Galvão | Instituto Tecnológico de Aeronáutica (ITA-DCTA) |
K.G. Grigorov | Space Research and Technology Institute |
L. Vieira | Universidade do Vale do Paraíba (Univap) |
Homero S. Maciel | Universidade do Vale do Paraíba (Univap) |
Films
Plasma TiO2
Plasma TiO2
Thermal TiO2
Thermal TiO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
Si(100) |
Notes
902 |