Publication Information

Title: Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN

Type: Journal

Info: Journal of the Korean Physical Society, Vol. 42, February 2003, pp. S975~S979

Date: 2003-02-01

DOI: http://dx.crossref.org/10.3938/jkps.42.975

Author Information

Name

Institution

Genitech Co., Ltd.

Genitech Co., Ltd.

Genitech Co., Ltd.

Genitech Co., Ltd.

Genitech Co., Ltd.

Genitech Co., Ltd.

Genitech Co., Ltd.

Films

Thermal Al2O3 using Custom

Deposition Temperature = 250C

75-24-1

7732-18-5

Plasma Al2O3 using Custom

Deposition Temperature = 250C

75-24-1

7782-44-7

Plasma TiN using Custom

Deposition Temperature = 350C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Unknown

Unknown

Chemical Composition, Impurities

AES, Auger Electron Spectroscopy

Unknown

Conformality, Step Coverage

TEM, Transmission Electron Microscope

Unknown

Substrates

Keywords

Notes

190



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