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Plasma Enhanced Atomic Layer Deposition of Al2O3 and TiN

Type:
Journal
Info:
Journal of the Korean Physical Society, Vol. 42, February 2003, pp. S975~S979
Date:
2003-02-01

Author Information

Name Institution
Seung-Woo ChoiGenitech Co., Ltd.
Choel-Min JangGenitech Co., Ltd.
Dae-Youn KimGenitech Co., Ltd.
Jeong-Seok HaGenitech Co., Ltd.
Hyoung-Sang ParkGenitech Co., Ltd.
Wonyong KohGenitech Co., Ltd.
Chun-Su LeeGenitech Co., Ltd.

Films

Thermal Al2O3


Plasma Al2O3


Plasma TiN

Hardware used: Custom


CAS#: 7727-37-9

CAS#: 1333-74-0

Film/Plasma Properties

Characteristic: Thickness
Analysis: -

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope

Substrates

Notes

190