Publication Information

Title: Nitride memristors

Type: Journal

Info: Applied Physics A 2012, Volume 109, Issue 1, pp 1--4

Date: 2012-07-03

DOI: http://dx.doi.org/10.1007/s00339-012-7052-x

Author Information

Name

Institution

Hewlett-Packard

Hewlett-Packard

Hewlett-Packard

University of California - Santa Cruz

Hewlett-Packard

University of California - Santa Cruz

Hewlett-Packard

Hewlett-Packard

Films

Plasma AlN using Unknown

Deposition Temperature = 350C

75-24-1

7727-37-9

1333-74-0

Plasma TiN using Unknown

Deposition Temperature = 350C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Electrical Properties

I-V, Current-Voltage Measurements

HP 4156A

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

Unknown

Images

TEM, Transmission Electron Microscope

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

Unknown

Optical Bandgap

UV-VIS Spectroscopy

Unknown

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Unknown

Substrates

SiO2

Keywords

Resistance RAM

Notes

657



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