Publication Information

Title:
Nitride memristors
Type:
Journal
Info:
Applied Physics A 2012, Volume 109, Issue 1, pp 1--4
Date:
2012-07-03

Author Information

Name Institution
Byung Joon ChoiHewlett-Packard
J. Joshua YangHewlett-Packard
Min-Xian Max ZhangHewlett-Packard
Kate J. NorrisUniversity of California - Santa Cruz
Douglas A. A. OhlbergHewlett-Packard
Nobuhiko P. KobayashiUniversity of California - Santa Cruz
Gilberto Medeiros-RibeiroHewlett-Packard
R. Stanley WilliamsHewlett-Packard

Films

Plasma AlN


Plasma TiN


Film/Plasma Properties

Characteristic: Electrical Properties
Analysis: I-V, Current-Voltage Measurements

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: SIMS, Secondary Ion Mass Spectrometry

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Optical Bandgap
Analysis: UV-VIS Spectroscopy

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Substrates

SiO2

Keywords

Resistance RAM

Notes

657