Publication Information

Title: Nitride memristors

Type: Journal

Info: Applied Physics A 2012, Volume 109, Issue 1, pp 1--4

Date: 2012-07-03

DOI: http://dx.doi.org/10.1007/s00339-012-7052-x

Author Information

Name

Institution

Hewlett-Packard

Hewlett-Packard

Hewlett-Packard

University of California - Santa Cruz

Hewlett-Packard

University of California - Santa Cruz

Hewlett-Packard

Hewlett-Packard

Films

Plasma AlN using Unknown

Deposition Temperature = 350C

75-24-1

7727-37-9

1333-74-0

Plasma TiN using Unknown

Deposition Temperature = 350C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Electrical Properties

I-V, Current-Voltage Measurements

HP 4156A

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

-

Chemical Composition, Impurities

SIMS, Secondary Ion Mass Spectrometry

-

Images

TEM, Transmission Electron Microscope

-

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

-

Optical Bandgap

UV-VIS Spectroscopy

-

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

-

Substrates

SiO2

Keywords

Resistance RAM

Notes

657



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