Ion energy control and its applicability to plasma enhanced atomic layer deposition for synthesizing titanium dioxide films

Type:
Journal
Info:
Thin Solid Films 660 (2018) 865-870
Date:
2018-03-01
DOI:
https://doi.org/10.1016/j.tsf.2018.03.001

Author Information

Name Institution
Shinya IwashitaTokyo Electron Technology Solutions, Ltd.
Kazuki DenpohTokyo Electron Technology Solutions, Ltd.
Munehito KagayaTokyo Electron Technology Solutions, Ltd.
Takamichi KikuchiTokyo Electron Technology Solutions, Ltd.
Naotaka NoroTokyo Electron Technology Solutions, Ltd.
Toshio HasegawaTokyo Electron Technology Solutions, Ltd.
Tsuyoshi MoriyaTokyo Electron Technology Solutions, Ltd.
Akira UedonoUniversity of Tsukuba

Films

Plasma TiO2

Hardware used: Custom Direct Capacitively Coupled Plasma
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 100C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Wet Etch Resistance
Analysis: Wet Etch
Diagnostic: -

Characteristic: Conformality, Step Coverage
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Characteristic: Images
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Ion Energy
Analysis: Ion Energy Analyzer
Diagnostic: -

Substrates

Si(100)
Amorphous C

Notes

1639