Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor
Type:
Journal
Info:
J. Vac. Sci. Technol. A 25(5), Sep/Oct 2007
Date:
2007-07-31
Author Information
| Name | Institution |
|---|---|
| S. B. S. Heil | Eindhoven University of Technology |
| J. L. van Hemmen | Eindhoven University of Technology |
| Chris Hodson | Oxford Instruments |
| Nick Singh | Oxford Instruments |
| J. H. Klootwijk | Philips |
| Fred Roozeboom | NXP Semiconductors Research |
| Mauritius C. M. (Richard) van de Sanden | Eindhoven University of Technology |
| Erwin (W.M.M.) Kessels | Eindhoven University of Technology |
Films
Plasma TiN
Plasma HfO2
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Optical Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Areal Density
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Areal Density
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(100) |
Notes
| HfO2 electrical characterization substrates HF dipped + DI rinsed. |
| Good description of FlexAL. |
| In situ SE. |
| 58 |