Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor

Type:
Journal
Info:
J. Vac. Sci. Technol. A 25(5), Sep/Oct 2007
Date:
2007-07-31

Author Information

Name Institution
S. B. S. HeilEindhoven University of Technology
J. L. van HemmenEindhoven University of Technology
Chris HodsonOxford Instruments
Nick SinghOxford Instruments
J. H. KlootwijkPhilips
Fred RoozeboomNXP Semiconductors Research
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Plasma TiN



Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: Optical Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Areal Density
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Areal Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(100)

Keywords

Notes

HfO2 electrical characterization substrates HF dipped + DI rinsed.
Good description of FlexAL.
In situ SE.
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