Publication Information

Title: Deposition of TiN and HfO2 in a commercial 200 mm remote plasma atomic layer deposition reactor

Type: Journal

Info: J. Vac. Sci. Technol. A 25(5), Sep/Oct 2007

Date: 2007-07-31

DOI: http://dx.doi.org/10.1116/1.2753846

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

Oxford Instruments

Oxford Instruments

Philips

NXP Semiconductors Research

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature Range N/A

7550-45-0

7727-37-9

1333-74-0

Deposition Temperature Range N/A

352535-01-4

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam M-2000U

Thickness

Ellipsometry

J.A. Woollam M-2000D

Thickness

Optical Reflectivity

Nanometrics Nanoscope 3000

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Areal Density

TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Unknown

Areal Density

RBS, Rutherford Backscattering Spectrometry

Unknown

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

XRD, X-Ray Diffraction

Philips X'Pert MPD Diffactometer

Resistivity, Sheet Resistance

Four-point Probe

Signatone

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

HP 4275A LCR

EOT, Equivalent Oxide Thickness

C-V, Capacitance-Voltage Measurements

Agilent 4155B Semiconductor Parameter Analyzer

Substrates

Si(100)

Keywords

Notes

HfO2 electrical characterization substrates HF dipped + DI rinsed.

Good description of FlexAL.

In situ SE.

58



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