Publication Information

Title: Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si

Type: Journal

Info: Microelectronic Engineering Volume 178, 25 June 2017, Pages 250-253

Date: 2017-06-25

DOI: http://dx.doi.org/10.1016/j.mee.2017.05.028

Author Information

Name

Institution

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Moscow Institute of Physics and Technology

Films

Plasma TiN using Unknown

Deposition Temperature = 320C

7550-45-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Substrates

HfZrO2

Keywords

Notes

1049



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