Electron Transport Across Ultrathin Ferroelectric Hf0.5Zr0.5O2 Films on Si

Type:
Journal
Info:
Microelectronic Engineering Volume 178, 25 June 2017, Pages 250-253
Date:
2017-06-25
DOI:
http://dx.doi.org/10.1016/j.mee.2017.05.028

Author Information

Name Institution
A. ChouprikMoscow Institute of Physics and Technology
A. G. ChernikovaMoscow Institute of Physics and Technology
Andrey M. MarkeevMoscow Institute of Physics and Technology
V. MikheevMoscow Institute of Physics and Technology
D. V. NegrovMoscow Institute of Physics and Technology
M. SpiridonovMoscow Institute of Physics and Technology
Sergey S. ZarubinMoscow Institute of Physics and Technology
A. ZenkevichMoscow Institute of Physics and Technology

Films

Plasma TiN

Hardware used: Unknown
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature = 320C

Film/Plasma Properties

Substrates

HfZrO2

Notes

1049