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  • Plasma-Enhanced Atomic Layer Deposition
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Plasma-Enhanced Atomic Layer Deposition of Anatase TiO2 Using TiCl4

Type:
Journal
Info:
J. Phys. Chem. C, 2009, 113 (37), pp 16307-16310
Date:
2009-08-12
DOI:
http://dx.doi.org/10.1021/jp907266c

Author Information

Name Institution
Nicholas G. KubalaColorado School of Mines
Pieter RowletteColorado School of Mines
Colin A. WoldenColorado School of Mines

Films

Plasma TiO2

Hardware used: Custom Remote Inductively Coupled Plasma
TiCl4, Titanium Tetrachloride
CAS#: 7550-45-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range = 110-200C

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-44

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-44

Characteristic: Surface Reactions
Analysis: QMS, Quadrupole Mass Spectrometer
Diagnostic: Stanford Research Systems RGA-300

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Siemens Kristalloflex 810

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: FTIR, Fourier Transform InfraRed spectroscopy
Diagnostic: Nicolet Nexus 870

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Digital Instruments Nanoscope III

Characteristic: Conformality, Step Coverage
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: Kratos Axis

Substrates

Silicon

Notes

752