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Publication Information

Title: Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma

Type: Journal

Info: Journal of Vacuum Science & Technology A 29, 021016 (2011)

Date: 2011-01-24

DOI: http://dx.doi.org/10.1116/1.3554691

Author Information

Name

Institution

Eindhoven University of Technology

Eindhoven University of Technology

National Research Council (CNR - Italy)

Eindhoven University of Technology

SAFC Hitech

Eindhoven University of Technology

Eindhoven University of Technology

Eindhoven University of Technology

Films

Deposition Temperature = 325C

0-0-0

7782-44-7

Deposition Temperature = 325C

0-0-0

7782-44-7

Deposition Temperature = 325C

7550-45-0

7727-37-9

1333-74-0

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

XRR, X-Ray Reflectivity

Philips X'Pert MPD Diffactometer

Density

XRR, X-Ray Reflectivity

Philips X'Pert MPD Diffactometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

Philips X'Pert MPD Diffactometer

Resistivity, Sheet Resistance

Four-point Probe

Unknown

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Veeco Dimension 3100

Precursor Vapor Pressure

Unknown

Unknown

Evaporation Characteristics

TGA, Thermo Gravimetric Analysis

Unknown

Chemical Composition, Impurities

RBS, Rutherford Backscattering Spectrometry

Unknown

Density

RBS, Rutherford Backscattering Spectrometry

Unknown

Chemical Composition, Impurities

TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

ION TOF IV

Nucleation

TEM, Transmission Electron Microscope

FEI Tecnai F30ST

Substrates

Si with native oxide

TiN

TEM Grid

Keywords

Nucleation

Notes

Nice plot comparing vapor pressure of eight different Ru precursors.

680


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