Publication Information

Title:
Atomic layer deposition of Ru from CpRu(CO)2Et using O2 gas and O2 plasma
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 29, 021016 (2011)
Date:
2011-01-24

Author Information

Name Institution
NoƩmi LeickEindhoven University of Technology
R. O. F. VerkuijlenEindhoven University of Technology
Luca LamagnaNational Research Council (CNR - Italy)
E. LangereisEindhoven University of Technology
S. RushworthSAFC Hitech
Fred RoozeboomEindhoven University of Technology
Mauritius C. M. (Richard) van de SandenEindhoven University of Technology
Erwin (W.M.M.) KesselsEindhoven University of Technology

Films

Thermal Ru


Plasma Ru


Plasma TiN


Film/Plasma Properties

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Density
Analysis: XRR, X-Ray Reflectivity

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Resistivity, Sheet Resistance
Analysis: Four-point Probe

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Precursor Vapor Pressure
Analysis: -

Characteristic: Evaporation Characteristics
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Density
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-SIMS, Time of Flight Secondary Ion Mass Spectrometry

Characteristic: Nucleation
Analysis: TEM, Transmission Electron Microscope

Substrates

Si with native oxide
TiN
TEM Grid

Keywords

Nucleation

Notes

Nice plot comparing vapor pressure of eight different Ru precursors.
680