Publication Information

Title:
Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
Type:
Journal
Info:
Applied Physics Letters 108, 242905 (2016)
Date:
2016-05-31

Author Information

Name Institution
A. G. ChernikovaMoscow Institute of Physics and Technology
Dmitry S. KuzmichevMoscow Institute of Physics and Technology
D. V. NegrovMoscow Institute of Physics and Technology
M. G. KozodaevMoscow Institute of Physics and Technology
S. N. PolyakovTechnological Institute for Superhard and Novel Carbon Materials
Andrey M. MarkeevMoscow Institute of Physics and Technology

Films

Plasma TiN



Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Ferroelectricity
Analysis: -

Characteristic: Electrical Properties
Analysis: -

Substrates

SiO2
TiN
HfLaOx

Keywords

Ferroelectrics
FRAM, Ferroelectric Random Access Memory

Notes

864