Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
Type:
Journal
Info:
Applied Physics Letters 108, 242905 (2016)
Date:
2016-05-31
Author Information
| Name | Institution |
|---|---|
| A. G. Chernikova | Moscow Institute of Physics and Technology |
| Dmitry S. Kuzmichev | Moscow Institute of Physics and Technology |
| D. V. Negrov | Moscow Institute of Physics and Technology |
| M. G. Kozodaev | Moscow Institute of Physics and Technology |
| S. N. Polyakov | Technological Institute for Superhard and Novel Carbon Materials |
| Andrey M. Markeev | Moscow Institute of Physics and Technology |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Ferroelectricity
Analysis: -
Characteristic: Electrical Properties
Analysis: -
Substrates
| SiO2 |
| TiN |
| HfLaOx |
Notes
| 864 |