tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La, CAS# 68959-87-5

Where to buy

NumberVendorRegionLink
1EreztechπŸ‡ΊπŸ‡ΈTris(isopropylcyclopentadienyl) lanthanum(III)
2Pegasus ChemicalsπŸ‡¬πŸ‡§Tris(isopropylcyclopentadienyl)lanthanum (III)
3DOCK/CHEMICALSπŸ‡©πŸ‡ͺTris(isopropylcyclopentadienyl)lanthanum
4Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTris(i-propylcyclopentadienyl)lanthanum (99.9%-La)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 10 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
2Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
3Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
4The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
5Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
6Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
7Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
8Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
9Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
10Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition