tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La, CAS# 68959-87-5

Where to buy

NumberVendorRegionLink
1EreztechπŸ‡ΊπŸ‡ΈTris(isopropylcyclopentadienyl) lanthanum(III)
2Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTris(i-propylcyclopentadienyl)lanthanum (99.9%-La)
3DOCK/CHEMICALSπŸ‡©πŸ‡ͺTris(isopropylcyclopentadienyl)lanthanum
4Pegasus ChemicalsπŸ‡¬πŸ‡§Tris(isopropylcyclopentadienyl)lanthanum (III)

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 10 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
2Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
3The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
4Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
5Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
6Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
7Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
8Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
9Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
10Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition