tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La, CAS# 68959-87-5

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTris(i-propylcyclopentadienyl)lanthanum (99.9%-La)
2DOCK/CHEMICALSπŸ‡©πŸ‡ͺTris(isopropylcyclopentadienyl)lanthanum
3Pegasus ChemicalsπŸ‡¬πŸ‡§Tris(isopropylcyclopentadienyl)lanthanum (III)
4EreztechπŸ‡ΊπŸ‡ΈTris(isopropylcyclopentadienyl) lanthanum(III)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 10 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films
2Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
3Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition
4Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks
5Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
6The Effects of Annealing Ambient on the Characteristics of La2O3 Films Deposited by RPALD
7Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
8Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
9Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer
10Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition