|2||Strem Chemicals, Inc.||Tris(i-propylcyclopentadienyl)lanthanum (99.9%-La)|
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Your search for publications using this chemistry returned 9 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.
|1||Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition|
|2||Characteristics of high-k dielectric ECR-ALD lanthanum hafnium oxide (LHO) films|
|3||Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films|
|4||Ferroelectric properties of full plasma-enhanced ALD TiN/La:HfO2/TiN stacks|
|5||Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties|
|6||Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films|
|7||Effects of an Al2O3 capping layer on La2O3 deposited by remote plasma atomic layer deposition|
|8||Flatband voltage control in p-metal gate metal-oxide-semiconductor field effect transistor by insertion of TiO2 layer|
|9||Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition|
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