Publication Information

Title:
Growth characteristics and electrical properties of La2O3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Thin Solid Films 519 (2010) 362 - 366
Date:
2010-07-26

Author Information

Name Institution
Woo-Hee KimYonsei University
Wan Joo MaengPohang University of Science and Technology (POSTECH)
Kyeong-Ju MoonYonsei University
Jae Min MyoungYonsei University
Hyungjun KimYonsei University

Films

Plasma La2O3


Thermal La2O3


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: CET, capacitance equivalent thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Interface Trap Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Thickness
Analysis: Ellipsometry

Substrates

Si(001)

Keywords

Plasma vs Thermal Comparison

Notes

705