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Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films

Type:
Journal
Info:
Journal of the Korean Physical Society, vol. 53, issue 6, p. 3334
Date:
2008-10-06
DOI:
http://dx.doi.org/10.3938/jkps.53.3334

Author Information

Name Institution
Woong-Sun KimHanyang University
Sang-Kyun ParkHanyang University
Dae-Young MoonHanyang University
Tae-Sub KimHanyang University
Byoung-Woo KangHanyang University
Jin-Kyo SeoHanyang University
Heon-Do KimHanyang University
Jong-Wan ParkHanyang University

Films

Plasma La2O3

Hardware used: Custom
tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La
CAS#: 68959-87-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma HfO2

Hardware used: Custom
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Plasma HfLaOx

Hardware used: Custom
TEMAHf, tetrakis(ethylmethylamido) Hafnium, hafnium ethylmethylamide, (EtMeN)4Hf
CAS#: 352535-01-4
tris(isopropylcyclopentadienyl)lanthanum, (i-PrCp)3La
CAS#: 68959-87-5
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent B1500A Semiconductor Device Analyzer

Substrates

Silicon

Notes

p-Si HF dipped.
Post-dep forming gas anneal at 450C.
65