Publication Information

Title:
Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
Type:
Journal
Info:
Journal of the Korean Physical Society, vol. 53, issue 6, p. 3334
Date:
2008-10-06

Author Information

Name Institution
Woong-Sun KimHanyang University
Sang-Kyun ParkHanyang University
Dae-Young MoonHanyang University
Tae-Sub KimHanyang University
Byoung-Woo KangHanyang University
Jin-Kyo SeoHanyang University
Heon-Do KimHanyang University
Jong-Wan ParkHanyang University

Films

Plasma La2O3




Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Silicon

Keywords

Gate Dielectric

Notes

p-Si HF dipped.
Post-dep forming gas anneal at 450C.
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