Comparison of the Deposition Characteristics and Electrical Properties for La2O3, HfO2 and LHO Films
Type:
Journal
Info:
Journal of the Korean Physical Society, vol. 53, issue 6, p. 3334
Date:
2008-10-06
Author Information
| Name | Institution |
|---|---|
| Woong-Sun Kim | Hanyang University |
| Sang-Kyun Park | Hanyang University |
| Dae-Young Moon | Hanyang University |
| Tae-Sub Kim | Hanyang University |
| Byoung-Woo Kang | Hanyang University |
| Jin-Kyo Seo | Hanyang University |
| Heon-Do Kim | Hanyang University |
| Jong-Wan Park | Hanyang University |
Films
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Characteristic: EOT, Equivalent Oxide Thickness
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Flat Band Voltage
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Silicon |
Notes
| p-Si HF dipped. |
| Post-dep forming gas anneal at 450C. |
| 65 |