Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 01A147 (2012)
Date:
2011-11-11

Author Information

Name Institution
Fu TangArizona State University
Chiyu ZhuArizona State University
David J. SmithArizona State University
Robert J. NemanichArizona State University

Films




Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements

Substrates

Si(100)

Notes

655