Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 30, 01A147 (2012)
Date:
2011-11-11
Author Information
Name | Institution |
---|---|
Fu Tang | Arizona State University |
Chiyu Zhu | Arizona State University |
David J. Smith | Arizona State University |
Robert J. Nemanich | Arizona State University |
Films
Plasma HfLaOx
Plasma HfO2
Plasma HfO2
Hardware used: Custom Remote Inductively Coupled Plasma
CAS#: 352535-01-4
CAS#: 7782-44-7
CAS#: 7440-59-7
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Breakdown Voltage
Analysis: I-V, Current-Voltage Measurements
Substrates
Si(100) |
Notes
655 |