He, Helium, CAS# 7440-59-7

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
2Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
3Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
4Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
5Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
6AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
7Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
8Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
9Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
10Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
11A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology