He, Helium, CAS# 7440-59-7

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
2Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
3Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
4Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
5A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
6Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
7Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
8Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
9Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
10Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
11AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing