He, Helium, CAS# 7440-59-7

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
2Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
3Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
4Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
5A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
6Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
7Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
8Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
9Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
10Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
11AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing