Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:

  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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He, Helium, CAS# 7440-59-7

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 11 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition
2AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
3Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
4Low temperature growth of high-k Hf-La oxides by remote-plasma atomic layer deposition: Morphology, stoichiometry, and dielectric properties
5Si atomic layer epitaxy based on Si2H6 and remote He plasma bombardment
6Alumina films as gas barrier layers grown by spatial atomic layer deposition with trimethylaluminum and different oxygen sources
7Development of Space Divided PE-ALD System and Process Design for Gap-Fill Process in Advanced Memory Devices
8A PEALD Tunnel Dielectric for Three-Dimensional Non-Volatile Charge-Trapping Technology
9Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
10Ta-rich atomic layer deposition TaN adhesion layer for Cu interconnects by means of plasma-enhanced atomic layer deposition
11Band alignment of zinc oxide as a channel layer in a gate stack structure grown by plasma enhanced atomic layer deposition