
AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
Type:
Journal
Info:
RSC Adv., 2019, 9, 12226-12231
Date:
2019-04-11
Author Information
Name | Institution |
---|---|
Wei-Chung Kao | National Taiwan University |
Wei-Hao Lee | National Taiwan University |
Sheng-Han Yi | National Taiwan University |
Tsung-Han Shen | National Taiwan University |
Hsin-Chih Lin | National Taiwan University |
Miin-Jang Chen | National Taiwan University |
Films
Plasma AlN
Other AlN
Other AlN
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 7727-37-9
CAS#: 7440-59-7
CAS#: 7440-37-1
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
4H-SiC |
Keywords
Notes
1396 |