Publication Information

Title:
AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
Type:
Journal
Info:
RSC Adv., 2019, 9, 12226-12231
Date:
2019-04-11

Author Information

Name Institution
Wei-Chung KaoNational Taiwan University
Wei-Hao LeeNational Taiwan University
Sheng-Han YiNational Taiwan University
Tsung-Han ShenNational Taiwan University
Hsin-Chih LinNational Taiwan University
Miin-Jang ChenNational Taiwan University

Films


Other AlN


Other AlN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope

Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

4H-SiC

Keywords

Notes

1396