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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
Type:
Journal
Info:
RSC Adv., 2019, 9, 12226-12231
Date:
2019-04-11
Author Information
| Name | Institution |
|---|---|
| Wei-Chung Kao | National Taiwan University |
| Wei-Hao Lee | National Taiwan University |
| Sheng-Han Yi | National Taiwan University |
| Tsung-Han Shen | National Taiwan University |
| Hsin-Chih Lin | National Taiwan University |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma AlN
Other AlN
Other AlN
Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
CAS#: 7727-37-9
CAS#: 7440-59-7
CAS#: 7440-37-1
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Interlayer
Analysis: TEM, Transmission Electron Microscope
Characteristic: Leakage Current
Analysis: I-V, Current-Voltage Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Dielectric Constant, Permittivity
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Hysteresis
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| 4H-SiC |
Keywords
Notes
| 1396 |