Ar, Argon, CAS# 7440-37-1

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
2Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
3Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
4Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
5Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
6A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
7Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
8Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
9Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
10Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
11Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
12Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
13Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
14Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
15Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
16Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma
17Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
18Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
19A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition
20Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
21Sub-nanometer heating depth of atomic layer annealing
22Formation of aluminum nitride thin films as gate dielectrics on Si(100)
23Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
24Carbon content control of silicon oxycarbide film with methane containing plasma
25The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
26Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
27In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
28Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
29Plasma enhanced atomic layer deposition of zinc sulfide thin films
30Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
31AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
32AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
33In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
34Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
35Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
36Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
37Plasma enhanced atomic layer deposition of aluminum sulfide thin films
38Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
39Room temperature atomic layer deposition of TiO2 on gold nanoparticles
40Experimental and theoretical determination of the role of ions in atomic layer annealing
41Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
42In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
43Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
44Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
45Atomic Layer Deposition of Nanolayered Carbon Films
46Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
47Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
48Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
49Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
50Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
51Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition