Ar, Argon, CAS# 7440-37-1

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 49 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
2Sub-nanometer heating depth of atomic layer annealing
3Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
4Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
5Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
6Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
7Formation of aluminum nitride thin films as gate dielectrics on Si(100)
8In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
9Carbon content control of silicon oxycarbide film with methane containing plasma
10Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks
11In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
12In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
13Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
14Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
15Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
16AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
17Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
18Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
19Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
20Plasma enhanced atomic layer deposition of aluminum sulfide thin films
21Plasma enhanced atomic layer deposition of zinc sulfide thin films
22Room temperature atomic layer deposition of TiO2 on gold nanoparticles
23Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
24Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
25Experimental and theoretical determination of the role of ions in atomic layer annealing
26Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
27Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
28Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
29Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
30Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
31Atomic Layer Deposition of Nanolayered Carbon Films
32Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
33Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
34Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
35Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
36Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
37The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
38AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
39A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition
40Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
41Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
42Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
43Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
44Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
45Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
46Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
47Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
48A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
49Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma