Ar, Argon, CAS# 7440-37-1

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 51 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Room temperature atomic layer deposition of TiO2 on gold nanoparticles
2Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
3Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
4Comparison of thermal, plasma-enhanced and layer by layer Ar plasma treatment atomic layer deposition of Tin oxide thin films
5Infrared Study of Room Temperature Atomic Layer Deposition of SnO2 Using Sn(CH3)4 and Plasma Excited Humidified Argon
6In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
7Atomic Layer Deposition of Nanolayered Carbon Films
8Infrared and optical emission spectroscopy study of atmospheric pressure plasma-enhanced spatial ALD of Al2O3
9Formation of aluminum nitride thin films as gate dielectrics on Si(100)
10Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
11Plasma enhanced atomic layer deposition of aluminum sulfide thin films
12Sub-nanometer heating depth of atomic layer annealing
13Working gas effect on properties of Al2O3 film in plasma-enhanced atomic layer deposition
14In vacuo studies on plasma-enhanced atomic layer deposition of cobalt thin films
15Plasma Enhanced Atomic Layer Deposition of TaN Films for Advanced Interconnects
16Low-temperature remote plasma-enhanced atomic layer deposition of graphene and characterization of its atomic-level structure
17Plasma enhanced atomic layer deposition of zinc sulfide thin films
18Carbon content control of silicon oxycarbide film with methane containing plasma
19Effective work function tunability and interfacial reactions with underlying HfO2 layer of plasma-enhanced atomic layer deposited TaCxNy films
20Influence of argon plasma on the deposition of Al2O3 film onto the PET surfaces by atomic layer deposition
21Characteristics of Cobalt Films Deposited by Using a Remote Plasma ALD Method with a CpCo(CO)2 Precursor
22Challenges in atomic layer deposition of carbon-containing silicon-based dielectrics
23The role of plasma in plasma-enhanced atomic layer deposition of crystalline films
24Growth of aluminum nitride thin films prepared by plasma-enhanced atomic layer deposition
25Evaluation of V2O5 Coatings Grown By Plasma Enhanced and Thermal Atomic Layer Deposition
26Impact of oxygen plasma postoxidation process on Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors
27Plasma-enhanced atomic-layer-deposited MoOx emitters for silicon heterojunction solar cells
28A Study of Ultrathin Superconducting Films of Niobium Nitride Obtained by Atomic Layer Deposition
29Aluminum Nitride Transition Layer for Power Electronics Applications Grown by Plasma-Enhanced Atomic Layer Deposition
30Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
31Enhanced interfacial reaction of precursor and low temperature substrate in HfO2 atomic layer deposition with highly Ar diluted O2 plasma
32Plasma-Assisted ALD of Highly Conductive HfNx: On the Effect of Energetic Ions on Film Microstructure
33Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition
34Experimental and theoretical determination of the role of ions in atomic layer annealing
35Hydrogen plasma enhanced oxide removal on GaSb planar and nanowire surfaces
36Comparison of PVD, PECVD & PEALD Ru(-C) films as Cu diffusion barriers by means of bias temperature stress measurements
37AC-Capacitance Techniques for Interface Trap Analysis in GaN-Based Buried-Channel MIS-HEMTs
38Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
39Tuning Material Properties of Oxides and Nitrides by Substrate Biasing during Plasma-Enhanced Atomic Layer Deposition on Planar and 3D Substrate Topographies
40Low-impurity, highly conformal atomic layer deposition of titanium nitride using NH3-Ar-H2 plasma treatment for capacitor electrodes
41Plasma treatment to tailor growth and photoelectric performance of plasma-enhanced atomic layer deposition SnOx infrared transparent conductive thin films
42Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
43AlN epitaxy on SiC by low-temperature atomic layer deposition via layer-by-layer, in situ atomic layer annealing
44Room-temperature atomic layer deposition of ZrO2 using tetrakis(ethylmethylamino)zirconium and plasma-excited humidified argon
45Interface engineering of ALD HfO2-based RRAM with Ar plasma treatment for reliable and uniform switching behaviors
46In vacuo investigations on the nucleation of TaCN by plasma enhanced atomic layer deposition
47A study of the impact of in-situ argon plasma treatment before atomic layer deposition of Al2O3 on GaN based metal oxide semiconductor capacitor
48Improved electrical performances of plasma-enhanced atomic layer deposited TaCxNy films by adopting Ar/H2 plasma
49Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
50Method of sealing pores in porous low-k SiOC(-H) films fabricated using plasma-assisted atomic layer deposition
51Atomic Layer Densification of AlN Passivation Layer on Epitaxial Ge for Enhancement of Reliability and Electrical Performance of High-K Gate Stacks