Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 37, 060909 (2019)
Date:
2019-11-04

Author Information

Name Institution
David R. BorisU.S. Naval Research Laboratory
Virginia D. WheelerU.S. Naval Research Laboratory
Jason R. AvilaU.S. Naval Research Laboratory
Syed B. QadriU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory
Scott G. WaltonU.S. Naval Research Laboratory

Films



Plasma Ga2O3


Plasma Ga2O3




CAS#: 7440-37-1

CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy

Characteristic: Plasma Potential
Analysis: Langmuir Probe

Characteristic: EEDF, Electron Energy Distribution Function
Analysis: Langmuir Probe

Characteristic: Ion Density
Analysis: Langmuir Probe

Characteristic: Plasma Species
Analysis: VUV Spectroscopic Elllipsometry

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

Sapphire
Silicon

Keywords

Notes

1550