TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALS🇩🇪Trimethylgallium
2Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga)
3Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
4Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
5Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%
6Pegasus Chemicals🇬🇧Trimethylgallium

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
2Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
3Perspectives on future directions in III-N semiconductor research
4Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
5Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
6Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
7Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
8Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
9Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
10Thin film GaP for solar cell application
11Atomic layer deposition of GaN at low temperatures
12Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
13Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
14Influence of PE-ALD of GaP on the Silicon Wafers Quality
15Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
16Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
17Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
18Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
19Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
20Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
21Plasma enhanced atomic layer deposition of gallium sulfide thin films
22Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
23Self-Limiting Growth of GaN at Low Temperatures
24Low temperature plasma enhanced deposition of GaP films on Si substrate
25Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
26Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
27Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
28Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
29n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
30Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
31Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
32Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
33Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
34Protective capping and surface passivation of III-V nanowires by atomic layer deposition
35Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
36Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
37Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
38Study of GaP/Si Heterojunction Solar Cells
39Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
40Gallium nitride thin films by microwave plasma-assisted ALD
41Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
42Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
43Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
44Capacitance characterization of GaP/n-Si structures grown by PE-ALD
45Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
46RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma