TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%
2Pegasus Chemicals🇬🇧Trimethylgallium
3DOCK/CHEMICALS🇩🇪Trimethylgallium
4Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga)
5Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
6Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
2Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
3Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
4Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
5Protective capping and surface passivation of III-V nanowires by atomic layer deposition
6Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
7Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
8Plasma enhanced atomic layer deposition of gallium sulfide thin films
9Perspectives on future directions in III-N semiconductor research
10Thin film GaP for solar cell application
11Atomic layer deposition of GaN at low temperatures
12Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
13Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
14Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
15Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
16Study of GaP/Si Heterojunction Solar Cells
17Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
18Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
19Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
20Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
21Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
22Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
23RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
24Gallium nitride thin films by microwave plasma-assisted ALD
25Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
26Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
27Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
28Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
29Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
30n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
31Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
32Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
33Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
34Low temperature plasma enhanced deposition of GaP films on Si substrate
35Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
36Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
37Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
38Capacitance characterization of GaP/n-Si structures grown by PE-ALD
39Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
40Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
41Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
42Influence of PE-ALD of GaP on the Silicon Wafers Quality
43Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
44Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
45Self-Limiting Growth of GaN at Low Temperatures
46Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition