TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
2Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga)
3Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%
4EpiValence🇬🇧Gallium Trimethyl
5Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
6Pegasus Chemicals🇬🇧Trimethylgallium
7DOCK/CHEMICALS🇩🇪Trimethylgallium

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Protective capping and surface passivation of III-V nanowires by atomic layer deposition
2Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
3Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
4Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
5Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
6Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
7Gallium nitride thin films by microwave plasma-assisted ALD
8Study of GaP/Si Heterojunction Solar Cells
9Self-Limiting Growth of GaN at Low Temperatures
10Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
11Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
12Plasma enhanced atomic layer deposition of gallium sulfide thin films
13Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
14Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
15Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
16RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
17Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
18Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
19Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
20Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
21Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
22Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
23Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
24Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
25Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
26Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
27Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
28Perspectives on future directions in III-N semiconductor research
29Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
30Low temperature plasma enhanced deposition of GaP films on Si substrate
31Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
32Capacitance characterization of GaP/n-Si structures grown by PE-ALD
33Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
34Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
35Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
36Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
37Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
38Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
39Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
40Thin film GaP for solar cell application
41Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
42Atomic layer deposition of GaN at low temperatures
43Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
44n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
45Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
46Influence of PE-ALD of GaP on the Silicon Wafers Quality