TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, elec. gr. (99.9999%-Ga)
2Pegasus ChemicalsπŸ‡¬πŸ‡§Trimethylgallium
3Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
4Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, 99+%
5Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
6EpiValenceπŸ‡¬πŸ‡§Gallium Trimethyl
7DOCK/CHEMICALSπŸ‡©πŸ‡ͺTrimethylgallium

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 62 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Protective capping and surface passivation of III-V nanowires by atomic layer deposition
2Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
3Thin film GaP for solar cell application
4Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
5Study of GaP/Si Heterojunction Solar Cells
6Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
7n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
8Perspectives on future directions in III-N semiconductor research
9Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
10Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
11Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
12Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100Β°C Using Sequential Surface Reactions
13Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
14Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
15Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
16Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
17Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
18Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
19Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
20Atomic layer deposition of GaN at low temperatures
21Gallium nitride thin films by microwave plasma-assisted ALD
22RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
23Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
24Low temperature plasma enhanced deposition of GaP films on Si substrate
25Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
26Self-Limiting Growth of GaN at Low Temperatures
27Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
28Influence of PE-ALD of GaP on the Silicon Wafers Quality
29Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
30Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
31Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
32Plasma enhanced atomic layer deposition of gallium sulfide thin films
33Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
34Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
35Capacitance characterization of GaP/n-Si structures grown by PE-ALD
36Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
37Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
38Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
39Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
40Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
41Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
42Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
43Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
44Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
45Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition