TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, 99+%
2Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
3Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, elec. gr. (99.9999%-Ga)
5Pegasus ChemicalsπŸ‡¬πŸ‡§Trimethylgallium
6DOCK/CHEMICALSπŸ‡©πŸ‡ͺTrimethylgallium

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
2Study of GaP/Si Heterojunction Solar Cells
3Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
4Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
5Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
6Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
7Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
8Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
9Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
10Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
11Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
12Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
13Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
14Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
15Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
16Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
17Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
18Perspectives on future directions in III-N semiconductor research
19Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
20RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
21Atomic layer deposition of GaN at low temperatures
22Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
23Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
24Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
25Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
26Gallium nitride thin films by microwave plasma-assisted ALD
27Low temperature plasma enhanced deposition of GaP films on Si substrate
28Self-Limiting Growth of GaN at Low Temperatures
29Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
30Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100Β°C Using Sequential Surface Reactions
31Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
32Protective capping and surface passivation of III-V nanowires by atomic layer deposition
33Thin film GaP for solar cell application
34Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
35Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
36Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
37Influence of PE-ALD of GaP on the Silicon Wafers Quality
38Capacitance characterization of GaP/n-Si structures grown by PE-ALD
39Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
40Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
41n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
42Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
43Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
44Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
45Plasma enhanced atomic layer deposition of gallium sulfide thin films
46Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia