Trimethyl Gallium, TMG, CAS# 1445-79-0

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylgallium, 99+%
2Strem Chemicals, Inc.Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
3Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga)
4Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
5EpiValenceGallium Trimethyl

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 43 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
3Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
4Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
5Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
6Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
7Electrical characteristics of β-Ga2O3 thin films grown by PEALD
8Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
9Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
10Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
11Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
12RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
13Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
14Atomic layer deposition of GaN at low temperatures
15Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
16Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
17Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
18Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
19Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
20Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
21Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
22Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
23Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
24Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
25Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
26Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
27Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
28Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
29Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
30Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
31Perspectives on future directions in III-N semiconductor research
32Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
33Self-Limiting Growth of GaN at Low Temperatures
34Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
35Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
36Capacitance characterization of GaP/n-Si structures grown by PE-ALD
37Influence of PE-ALD of GaP on the Silicon Wafers Quality
38Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
39Low temperature plasma enhanced deposition of GaP films on Si substrate
40n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
41Study of GaP/Si Heterojunction Solar Cells
42Thin film GaP for solar cell application
43Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures


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