TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
2Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga)
3DOCK/CHEMICALS🇩🇪Trimethylgallium
4Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%
5Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
6Pegasus Chemicals🇬🇧Trimethylgallium

www.plasma-ald.com does not endorse any chemical suppliers. These links are provided for the benefit of our users. If a link goes bad, let us know.

If you would like your company's precursor products listed, or your existing listing changed or removed, send me an email.


Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
2Protective capping and surface passivation of III-V nanowires by atomic layer deposition
3Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
4Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
5Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
6Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
7Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
8Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
9Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
10Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
11Influence of PE-ALD of GaP on the Silicon Wafers Quality
12Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
13Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
14RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
15Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
16Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
17Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
18Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
19Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
20Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
21Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
22Self-Limiting Growth of GaN at Low Temperatures
23Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
24Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
25Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
26Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
27Thin film GaP for solar cell application
28Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
29Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
30Plasma enhanced atomic layer deposition of gallium sulfide thin films
31Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
32Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
33Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
34Capacitance characterization of GaP/n-Si structures grown by PE-ALD
35Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
36Atomic layer deposition of GaN at low temperatures
37Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
38Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
39Low temperature plasma enhanced deposition of GaP films on Si substrate
40Perspectives on future directions in III-N semiconductor research
41Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
42Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
43Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
44Gallium nitride thin films by microwave plasma-assisted ALD
45Study of GaP/Si Heterojunction Solar Cells
46n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD