TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALS🇩🇪Trimethylgallium
2EpiValence🇬🇧Gallium Trimethyl
3Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%
5Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga)
6Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
7Pegasus Chemicals🇬🇧Trimethylgallium

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 62 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Perspectives on future directions in III-N semiconductor research
2Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
3Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
4Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
5Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
6Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
7Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
8Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
9Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
10Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
11Study of GaP/Si Heterojunction Solar Cells
12Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
13Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
14Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
15Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
16Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
17n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
18Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
19Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
20Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
21Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
22Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
23Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
24Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
25Influence of PE-ALD of GaP on the Silicon Wafers Quality
26Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
27Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
28Atomic layer deposition of GaN at low temperatures
29Thin film GaP for solar cell application
30Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
31Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
32Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
33Capacitance characterization of GaP/n-Si structures grown by PE-ALD
34Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
35Plasma enhanced atomic layer deposition of gallium sulfide thin films
36Gallium nitride thin films by microwave plasma-assisted ALD
37Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
38Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
39RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
40Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
41Self-Limiting Growth of GaN at Low Temperatures
42Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
43Low temperature plasma enhanced deposition of GaP films on Si substrate
44Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
45Protective capping and surface passivation of III-V nanowires by atomic layer deposition