TMG, GaMe₃, Trimethyl Galium, CAS# 1445-79-0

Where to buy

Number	Vendor	Link
1	Strem Chemicals, Inc.	Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
2	Strem Chemicals, Inc.	Trimethylgallium, 99+%
3	Strem Chemicals, Inc.	Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
4	Strem Chemicals, Inc.	Trimethylgallium, elec. gr. (99.9999%-Ga)

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 50 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2	Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
3	Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
4	Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
5	Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
6	Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
7	Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
8	Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
9	RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
10	Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
11	Atomic layer deposition of GaN at low temperatures
12	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
13	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
14	Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
15	Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
16	Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
17	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
18	Perspectives on future directions in III-N semiconductor research
19	Protective capping and surface passivation of III-V nanowires by atomic layer deposition
20	Self-Limiting Growth of GaN at Low Temperatures
21	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
22	Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
23	Capacitance characterization of GaP/n-Si structures grown by PE-ALD
24	Influence of PE-ALD of GaP on the Silicon Wafers Quality
25	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
26	Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
27	Low temperature plasma enhanced deposition of GaP films on Si substrate
28	n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
29	Study of GaP/Si Heterojunction Solar Cells
30	Thin film GaP for solar cell application
31	Plasma enhanced atomic layer deposition of gallium sulfide thin films
32	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
33	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD

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