| 1 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 2 | Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures |
| 3 | Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures |
| 4 | Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition |
| 5 | Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions |
| 6 | Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition |
| 7 | Electrical characteristics of β-Ga2O3 thin films grown by PEALD |
| 8 | Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy |
| 9 | Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma |
| 10 | Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge |
| 11 | Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy |
| 12 | RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma |
| 13 | Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride |
| 14 | Atomic layer deposition of GaN at low temperatures |
| 15 | Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition |
| 16 | Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition |
| 17 | Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions |
| 18 | Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films |
| 19 | Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition |
| 20 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |
| 21 | Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3 |
| 22 | Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures |
| 23 | Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition |
| 24 | Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia |
| 25 | Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition |
| 26 | Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels |
| 27 | Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures |
| 28 | Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition |
| 29 | Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures |
| 30 | Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition |
| 31 | Perspectives on future directions in III-N semiconductor research |
| 32 | Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films |
| 33 | Self-Limiting Growth of GaN at Low Temperatures |
| 34 | Self-limiting growth of GaN using plasma-enhanced atomic layer deposition |
| 35 | Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source |
| 36 | Capacitance characterization of GaP/n-Si structures grown by PE-ALD |
| 37 | Influence of PE-ALD of GaP on the Silicon Wafers Quality |
| 38 | Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer |
| 39 | Low temperature plasma enhanced deposition of GaP films on Si substrate |
| 40 | n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD |
| 41 | Study of GaP/Si Heterojunction Solar Cells |
| 42 | Thin film GaP for solar cell application |
| 43 | Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures |