TMG, GaMe3, Trimethyl Galium, CAS# 1445-79-0

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylgallium, 99+%
2Strem Chemicals, Inc.Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
3Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 49 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
3Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
4Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
5Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
6Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
7Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
8RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
9Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
10Atomic layer deposition of GaN at low temperatures
11Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
12Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
13Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
14Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
15Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
16Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
17Perspectives on future directions in III-N semiconductor research
18Protective capping and surface passivation of III-V nanowires by atomic layer deposition
19Self-Limiting Growth of GaN at Low Temperatures
20Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
21Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
22Capacitance characterization of GaP/n-Si structures grown by PE-ALD
23Influence of PE-ALD of GaP on the Silicon Wafers Quality
24Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
25Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
26Low temperature plasma enhanced deposition of GaP films on Si substrate
27n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
28Study of GaP/Si Heterojunction Solar Cells
29Thin film GaP for solar cell application
30Plasma enhanced atomic layer deposition of gallium sulfide thin films
31Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
32Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD


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