TMG, GaMe3, Trimethyl Galium, CAS# 1445-79-0

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga)
2Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
3Strem Chemicals, Inc.Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylgallium, 99+%

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 57 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
3Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
4Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
5Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
6Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
7Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
8Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
9Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
10Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
11Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
12RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
13Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
14Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
15Atomic layer deposition of GaN at low temperatures
16Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
17Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
18Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
19Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
20Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
21Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
22Perspectives on future directions in III-N semiconductor research
23Protective capping and surface passivation of III-V nanowires by atomic layer deposition
24Self-Limiting Growth of GaN at Low Temperatures
25Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
26Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
27Capacitance characterization of GaP/n-Si structures grown by PE-ALD
28Influence of PE-ALD of GaP on the Silicon Wafers Quality
29Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
30Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
31Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
32Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
33Low temperature plasma enhanced deposition of GaP films on Si substrate
34n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
35Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
36Study of GaP/Si Heterojunction Solar Cells
37Thin film GaP for solar cell application
38Plasma enhanced atomic layer deposition of gallium sulfide thin films
39Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
40Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD