Plasma ALD, LLC Consulting

2024 Year in Review

The publication database currently has 1749 entries.

219 Films

293 Precursors

81 Dep Hardware Sets

258 Characteristics

99 Theses

5415 Authors

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TMG, trimethyl galium, GaMe₃, CAS# 1445-79-0

Where to buy

Number	Vendor	Region	Link
1	Pegasus Chemicals	🇬🇧	Trimethylgallium
2	DOCK/CHEMICALS	🇩🇪	Trimethylgallium
3	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
4	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, elec. gr. (99.9999%-Ga)
5	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
6	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, 99+%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Self-Limiting Growth of GaN at Low Temperatures
2	Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
3	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
4	Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
5	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
6	Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
7	Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH₃
8	Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH₃ plasma pretreatment
9	Thin film GaP for solar cell application
10	Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
11	Plasma enhanced atomic layer deposition of gallium sulfide thin films
12	Annealing effects on properties of Ga₂O₃ films deposited by plasma-enhanced atomic layer deposition
13	Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
14	Capacitance characterization of GaP/n-Si structures grown by PE-ALD
15	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
16	Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
17	Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
18	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
19	RT Ga₂O₃ atomic layer deposition by using trimethylgallium and water-oxygen plasma
20	Low temperature plasma enhanced deposition of GaP films on Si substrate
21	Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p⁺ Regions
22	Low temperature deposition of Ga₂O₃ thin films using trimethylgallium and oxygen plasma
23	Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
24	Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
25	Effect of postdeposition annealing on the electrical properties of beta-Ga₂O₃ thin films grown on p-Si by plasma-enhanced atomic layer deposition
26	Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
27	Phase Control of Crystalline Ga₂O₃ Films by Plasma-Enhanced Atomic Layer Deposition
28	Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
29	Study of GaP/Si Heterojunction Solar Cells
30	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
31	Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
32	Protective capping and surface passivation of III-V nanowires by atomic layer deposition
33	Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
34	Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
35	Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
36	Chemical, optical, and electrical characterization of Ga₂O₃ thin films grown by plasma-enhanced atomic layer deposition
37	Perspectives on future directions in III-N semiconductor research
38	Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
39	n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
40	Gallium nitride thin films by microwave plasma-assisted ALD
41	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
42	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
43	Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
44	Influence of PE-ALD of GaP on the Silicon Wafers Quality
45	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
46	Atomic layer deposition of GaN at low temperatures