TMG, GaMe3, Trimethyl Galium, CAS# 1445-79-0

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga)
2Strem Chemicals, Inc.Trimethylgallium, 99+%
3Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 53 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
3Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
4Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
5Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
6Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
7Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
8Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
9RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
10Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
11Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
12Atomic layer deposition of GaN at low temperatures
13Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
14Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
15Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
16Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
17Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
18Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
19Perspectives on future directions in III-N semiconductor research
20Protective capping and surface passivation of III-V nanowires by atomic layer deposition
21Self-Limiting Growth of GaN at Low Temperatures
22Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
23Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
24Capacitance characterization of GaP/n-Si structures grown by PE-ALD
25Influence of PE-ALD of GaP on the Silicon Wafers Quality
26Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
27Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
28Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
29Low temperature plasma enhanced deposition of GaP films on Si substrate
30n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
31Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
32Study of GaP/Si Heterojunction Solar Cells
33Thin film GaP for solar cell application
34Plasma enhanced atomic layer deposition of gallium sulfide thin films
35Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
36Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD