TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
2Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
3Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga)
4Pegasus Chemicals🇬🇧Trimethylgallium
5Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%
6DOCK/CHEMICALS🇩🇪Trimethylgallium

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
2Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
3Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
4Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
5Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
6Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
7Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
8Perspectives on future directions in III-N semiconductor research
9Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
10Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
11Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
12Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
13Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
14Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
15Self-Limiting Growth of GaN at Low Temperatures
16Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
17Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
18Low temperature plasma enhanced deposition of GaP films on Si substrate
19Atomic layer deposition of GaN at low temperatures
20Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
21Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
22Plasma enhanced atomic layer deposition of gallium sulfide thin films
23Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
24Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
25Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
26Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
27Protective capping and surface passivation of III-V nanowires by atomic layer deposition
28Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
29Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
30Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
31Capacitance characterization of GaP/n-Si structures grown by PE-ALD
32Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
33Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
34RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
35Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
36Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
37Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
38Influence of PE-ALD of GaP on the Silicon Wafers Quality
39Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
40Thin film GaP for solar cell application
41Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
42Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
43Study of GaP/Si Heterojunction Solar Cells
44Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
45Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
46Gallium nitride thin films by microwave plasma-assisted ALD