TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorRegionLink
1DOCK/CHEMICALSπŸ‡©πŸ‡ͺTrimethylgallium
2Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
3Pegasus ChemicalsπŸ‡¬πŸ‡§Trimethylgallium
4Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, 99+%
5EpiValenceπŸ‡¬πŸ‡§Gallium Trimethyl
6Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, elec. gr. (99.9999%-Ga)
7Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 62 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Perspectives on future directions in III-N semiconductor research
2Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
3Plasma enhanced atomic layer deposition of gallium sulfide thin films
4Atomic layer deposition of GaN at low temperatures
5Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
6Low temperature plasma enhanced deposition of GaP films on Si substrate
7Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
8Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
9Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
10Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
11Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
12Influence of PE-ALD of GaP on the Silicon Wafers Quality
13Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
14Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
15Study of GaP/Si Heterojunction Solar Cells
16n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
17Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
18Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
19Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
20Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
21Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
22Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
23Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
24Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
25Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
26Self-Limiting Growth of GaN at Low Temperatures
27Protective capping and surface passivation of III-V nanowires by atomic layer deposition
28Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
29Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
30RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
31Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
32Gallium nitride thin films by microwave plasma-assisted ALD
33Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
34Capacitance characterization of GaP/n-Si structures grown by PE-ALD
35Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
36Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
37Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
38Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
39Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
40Thin film GaP for solar cell application
41Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100Β°C Using Sequential Surface Reactions
42Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
43Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
44Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
45Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge