Plasma ALD, LLC Consulting

2024 Year in Review

The publication database currently has 1749 entries.

219 Films

293 Precursors

81 Dep Hardware Sets

258 Characteristics

99 Theses

5415 Authors

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TMG, trimethyl galium, GaMe₃, CAS# 1445-79-0

Where to buy

Number	Vendor	Region	Link
1	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, elec. gr. (99.9999%-Ga)
2	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
3	Pegasus Chemicals	🇬🇧	Trimethylgallium
4	DOCK/CHEMICALS	🇩🇪	Trimethylgallium
5	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, 99+%
6	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
2	Annealing effects on properties of Ga₂O₃ films deposited by plasma-enhanced atomic layer deposition
3	Gallium nitride thin films by microwave plasma-assisted ALD
4	Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
5	Influence of PE-ALD of GaP on the Silicon Wafers Quality
6	Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
7	RT Ga₂O₃ atomic layer deposition by using trimethylgallium and water-oxygen plasma
8	Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
9	Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
10	Low temperature deposition of Ga₂O₃ thin films using trimethylgallium and oxygen plasma
11	Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH₃ plasma pretreatment
12	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
13	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
14	Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
15	Capacitance characterization of GaP/n-Si structures grown by PE-ALD
16	Phase Control of Crystalline Ga₂O₃ Films by Plasma-Enhanced Atomic Layer Deposition
17	Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
18	Effect of postdeposition annealing on the electrical properties of beta-Ga₂O₃ thin films grown on p-Si by plasma-enhanced atomic layer deposition
19	Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
20	Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
21	Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
22	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
23	Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
24	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
25	Atomic layer deposition of GaN at low temperatures
26	n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
27	Protective capping and surface passivation of III-V nanowires by atomic layer deposition
28	Low temperature plasma enhanced deposition of GaP films on Si substrate
29	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
30	Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
31	Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p⁺ Regions
32	Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
33	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
34	Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
35	Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
36	Self-Limiting Growth of GaN at Low Temperatures
37	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
38	Thin film GaP for solar cell application
39	Perspectives on future directions in III-N semiconductor research
40	Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
41	Chemical, optical, and electrical characterization of Ga₂O₃ thin films grown by plasma-enhanced atomic layer deposition
42	Study of GaP/Si Heterojunction Solar Cells
43	Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
44	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
45	Plasma enhanced atomic layer deposition of gallium sulfide thin films
46	Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH₃