TMG, GaMe₃, Trimethyl Galium, CAS# 1445-79-0

Where to buy

Number	Vendor	Link
1	Strem Chemicals, Inc.	Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
2	Strem Chemicals, Inc.	Trimethylgallium, elec. gr. (99.9999%-Ga)
3	Strem Chemicals, Inc.	Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
4	Strem Chemicals, Inc.	Trimethylgallium, 99+%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 46 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
3	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
4	Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
5	Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
6	Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
7	Electrical characteristics of β-Ga2O3 thin films grown by PEALD
8	Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
9	Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
10	Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
11	Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
12	RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
13	Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
14	Atomic layer deposition of GaN at low temperatures
15	Comparison of trimethylgallium and triethylgallium as 'Ga' source materials for the growth of ultrathin GaN films on Si(100) substrates via hollow-cathode plasma-assisted atomic layer deposition
16	Effect of substrate temperature and Ga source precursor on growth and material properties of GaN grown by hollow cathode plasma assisted atomic layer deposition
17	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
18	Electronic and optical device applications of hollow cathode plasma assisted atomic layer deposition based GaN thin films
19	Fabrication of flexible polymer-GaN core-shell nanofibers by the combination of electrospinning and hollow cathode plasma-assisted atomic layer deposition
20	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
21	Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
22	Hollow cathode plasma-assisted atomic layer deposition of crystalline AlN, GaN and AlxGa1-xN thin films at low temperatures
23	Influence of N2/H2 and N2 plasma on binary III-nitride films prepared by hollow-cathode plasma-assisted atomic layer deposition
24	Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
25	Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
26	Low temperature thin film transistors with hollow cathode plasma-assisted atomic layer deposition based GaN channels
27	Low-temperature hollow cathode plasma-assisted atomic layer deposition of crystalline III-nitride thin films and nanostructures
28	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
29	Metal-semiconductor-metal ultraviolet photodetectors based on gallium nitride grown by atomic layer deposition at low temperatures
30	Optical characteristics of nanocrystalline AlxGa1-xN thin films deposited by hollow cathode plasma-assisted atomic layer deposition
31	Perspectives on future directions in III-N semiconductor research
32	Plasma-Enhanced Atomic Layer Deposition of III-Nitride Thin Films
33	Self-Limiting Growth of GaN at Low Temperatures
34	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
35	Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
36	Capacitance characterization of GaP/n-Si structures grown by PE-ALD
37	Influence of PE-ALD of GaP on the Silicon Wafers Quality
38	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
39	Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
40	Low temperature plasma enhanced deposition of GaP films on Si substrate
41	n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
42	Study of GaP/Si Heterojunction Solar Cells
43	Thin film GaP for solar cell application
44	Plasma enhanced atomic layer deposition of gallium sulfide thin films
45	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
46	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD

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