TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
2Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga)
3Strem Chemicals, Inc.Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylgallium, 99+%
5EpiValenceGallium Trimethyl

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 60 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
3Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
4Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
5Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
6Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
7Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
8Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
9Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
10Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
11Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
12Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
13Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
14RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
15Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
16Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
17Atomic layer deposition of GaN at low temperatures
18Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
19Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
20Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
21Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
22Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
23Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
24Perspectives on future directions in III-N semiconductor research
25Protective capping and surface passivation of III-V nanowires by atomic layer deposition
26Self-Limiting Growth of GaN at Low Temperatures
27Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
28Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
29Capacitance characterization of GaP/n-Si structures grown by PE-ALD
30Influence of PE-ALD of GaP on the Silicon Wafers Quality
31Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
32Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
33Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
34Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
35Low temperature plasma enhanced deposition of GaP films on Si substrate
36n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
37Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
38Study of GaP/Si Heterojunction Solar Cells
39Thin film GaP for solar cell application
40Plasma enhanced atomic layer deposition of gallium sulfide thin films
41Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
42Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
43Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD