TMG, GaMe3, Trimethyl Galium, CAS# 1445-79-0

Where to buy

NumberVendorLink
1Strem Chemicals, Inc.Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
2EpiValenceGallium Trimethyl
3Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
4Strem Chemicals, Inc.Trimethylgallium, elec. gr. (99.9999%-Ga)
5Strem Chemicals, Inc.Trimethylgallium, 99+%

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 58 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
3Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
4Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
5Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
6Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
7Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
8Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
9Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
10Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
11Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
12Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
13RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
14Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
15Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
16Atomic layer deposition of GaN at low temperatures
17Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
18Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
19Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
20Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
21Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
22Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
23Perspectives on future directions in III-N semiconductor research
24Protective capping and surface passivation of III-V nanowires by atomic layer deposition
25Self-Limiting Growth of GaN at Low Temperatures
26Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
27Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
28Capacitance characterization of GaP/n-Si structures grown by PE-ALD
29Influence of PE-ALD of GaP on the Silicon Wafers Quality
30Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
31Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
32Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
33Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
34Low temperature plasma enhanced deposition of GaP films on Si substrate
35n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
36Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
37Study of GaP/Si Heterojunction Solar Cells
38Thin film GaP for solar cell application
39Plasma enhanced atomic layer deposition of gallium sulfide thin films
40Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
41Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD