Plasma ALD, LLC Consulting

2024 Year in Review

The publication database currently has 1749 entries.

219 Films

293 Precursors

81 Dep Hardware Sets

258 Characteristics

99 Theses

5415 Authors

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TMG, trimethyl galium, GaMe₃, CAS# 1445-79-0

Where to buy

Number	Vendor	Region	Link
1	Pegasus Chemicals	🇬🇧	Trimethylgallium
2	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
3	DOCK/CHEMICALS	🇩🇪	Trimethylgallium
4	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, elec. gr. (99.9999%-Ga)
5	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
6	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, 99+%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Gallium nitride thin films by microwave plasma-assisted ALD
2	Self-Limiting Growth of GaN at Low Temperatures
3	Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH₃
4	Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
5	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
6	Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
7	Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
8	Protective capping and surface passivation of III-V nanowires by atomic layer deposition
9	Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
10	Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
11	n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
12	Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
13	Phase Control of Crystalline Ga₂O₃ Films by Plasma-Enhanced Atomic Layer Deposition
14	Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
15	Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH₃ plasma pretreatment
16	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
17	Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
18	Chemical, optical, and electrical characterization of Ga₂O₃ thin films grown by plasma-enhanced atomic layer deposition
19	Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p⁺ Regions
20	Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
21	Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
22	Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
23	Influence of PE-ALD of GaP on the Silicon Wafers Quality
24	Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
25	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
26	Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
27	Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
28	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
29	Low temperature plasma enhanced deposition of GaP films on Si substrate
30	Annealing effects on properties of Ga₂O₃ films deposited by plasma-enhanced atomic layer deposition
31	Atomic layer deposition of GaN at low temperatures
32	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
33	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
34	Plasma enhanced atomic layer deposition of gallium sulfide thin films
35	Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
36	Low temperature deposition of Ga₂O₃ thin films using trimethylgallium and oxygen plasma
37	Effect of postdeposition annealing on the electrical properties of beta-Ga₂O₃ thin films grown on p-Si by plasma-enhanced atomic layer deposition
38	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
39	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
40	Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
41	RT Ga₂O₃ atomic layer deposition by using trimethylgallium and water-oxygen plasma
42	Capacitance characterization of GaP/n-Si structures grown by PE-ALD
43	Thin film GaP for solar cell application
44	Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
45	Study of GaP/Si Heterojunction Solar Cells
46	Perspectives on future directions in III-N semiconductor research