TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorRegionLink
1Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
2Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga)
3Pegasus Chemicals🇬🇧Trimethylgallium
4DOCK/CHEMICALS🇩🇪Trimethylgallium
5Strem Chemicals, Inc.🇺🇸Trimethylgallium, 99+%
6Strem Chemicals, Inc.🇺🇸Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 63 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Influence of PE-ALD of GaP on the Silicon Wafers Quality
2Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
3Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
4Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
5Gallium nitride thin films by microwave plasma-assisted ALD
6Self-Limiting Growth of GaN at Low Temperatures
7Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
8Protective capping and surface passivation of III-V nanowires by atomic layer deposition
9Plasma enhanced atomic layer deposition of gallium sulfide thin films
10Study of GaP/Si Heterojunction Solar Cells
11Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
12Atomic layer deposition of GaN at low temperatures
13Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
14Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
15Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
16Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
17n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
18Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
19Thin film GaP for solar cell application
20Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
21Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
22Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
23Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
24Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
25Perspectives on future directions in III-N semiconductor research
26Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
27Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
28Capacitance characterization of GaP/n-Si structures grown by PE-ALD
29Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
30Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
31Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
32Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
33Low temperature plasma enhanced deposition of GaP films on Si substrate
34Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
35RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
36Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
37Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
38Plasma enhanced atomic layer deposition and atomic layer etching of gallium oxide using trimethylgallium
39Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
40Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
41Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
42Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
43Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
44Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
45Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
46Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition