TMG, trimethyl galium, GaMe3, CAS# 1445-79-0

Where to buy

NumberVendorRegionLink
1EpiValenceπŸ‡¬πŸ‡§Gallium Trimethyl
2Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
3Pegasus ChemicalsπŸ‡¬πŸ‡§Trimethylgallium
4Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, 99+%
5DOCK/CHEMICALSπŸ‡©πŸ‡ͺTrimethylgallium
6Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
7Strem Chemicals, Inc.πŸ‡ΊπŸ‡ΈTrimethylgallium, elec. gr. (99.9999%-Ga)

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 61 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
2Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
3Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
4Chemical, optical, and electrical characterization of Ga2O3 thin films grown by plasma-enhanced atomic layer deposition
5Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
6Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition
7Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
8Low temperature deposition of Ga2O3 thin films using trimethylgallium and oxygen plasma
9Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
10Phase Control of Crystalline Ga2O3 Films by Plasma-Enhanced Atomic Layer Deposition
11Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
12Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH3 plasma pretreatment
13Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
14Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
15RT Ga2O3 atomic layer deposition by using trimethylgallium and water-oxygen plasma
16Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
17Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
18Atomic layer deposition of GaN at low temperatures
19Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100Β°C Using Sequential Surface Reactions
20Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
21Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
22Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
23Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
24Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
25Perspectives on future directions in III-N semiconductor research
26Protective capping and surface passivation of III-V nanowires by atomic layer deposition
27Self-Limiting Growth of GaN at Low Temperatures
28Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
29Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
30Capacitance characterization of GaP/n-Si structures grown by PE-ALD
31Influence of PE-ALD of GaP on the Silicon Wafers Quality
32Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
33Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
34Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
35Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
36Low temperature plasma enhanced deposition of GaP films on Si substrate
37n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
38Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
39Study of GaP/Si Heterojunction Solar Cells
40Thin film GaP for solar cell application
41Plasma enhanced atomic layer deposition of gallium sulfide thin films
42Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
43Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
44Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD