2022 Year in Review

February 2023 Stats

The publication database currently has 1673 entries.

204 Films

279 Precursors

78 Dep Hardware Sets

253 Characteristics

91 Theses

5136 Authors

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2021 Year in Review

ALD Links

Recent Database Additions

Characterization of thin Al₂O₃/SiO₂ dielectric stack for CMOS transistors Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution Hierarchical Atomic Layer Deposited V₂O₅ on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO₂) plasma enhanced atomic layer deposition (PEALD) processes

TMG, trimethyl galium, GaMe₃, CAS# 1445-79-0

Where to buy

Number	Vendor	Region	Link
1	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, elec. gr. (99.9999%-Ga)
2	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, elec. gr. (99.9999%-Ga), contained in 50 ml electropolished cylinder for CVD/ALD
3	Pegasus Chemicals	🇬🇧	Trimethylgallium
4	DOCK/CHEMICALS	🇩🇪	Trimethylgallium
5	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, 99+%, contained in 50 ml cylinder for CVD/ALD
6	EpiValence	🇬🇧	Gallium Trimethyl
7	Strem Chemicals, Inc.	🇺🇸	Trimethylgallium, 99+%

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Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 61 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

Number	Title
1	Capacitance characterization of GaP/n-Si structures grown by PE-ALD
2	Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
3	Annealing effects on properties of Ga₂O₃ films deposited by plasma-enhanced atomic layer deposition
4	Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
5	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
6	Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
7	Low temperature plasma enhanced deposition of GaP films on Si substrate
8	Study of GaP/Si Heterojunction Solar Cells
9	Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride
10	Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
11	Plasma enhanced atomic layer deposition of gallium oxide on crystalline silicon: demonstration of surface passivation and negative interfacial charge
12	Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
13	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
14	Thin film GaP for solar cell application
15	Chemical, optical, and electrical characterization of Ga₂O₃ thin films grown by plasma-enhanced atomic layer deposition
16	Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
17	Atomic layer deposition of GaN at low temperatures
18	Phase Control of Crystalline Ga₂O₃ Films by Plasma-Enhanced Atomic Layer Deposition
19	Perspectives on future directions in III-N semiconductor research
20	Influence of PE-ALD of GaP on the Silicon Wafers Quality
21	Effect of postdeposition annealing on the electrical properties of beta-Ga₂O₃ thin films grown on p-Si by plasma-enhanced atomic layer deposition
22	Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
23	Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH₃
24	Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy
25	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
26	Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
27	Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
28	Room Temperature Atomic Layer Deposition of Gallium Oxide Investigated by IR Absorption Spectroscopy
29	Self-Limiting Growth of GaN at Low Temperatures
30	Remote plasma-enhanced atomic layer deposition of gallium oxide thin films with NH₃ plasma pretreatment
31	Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
32	Low-temperature growth of gallium oxide thin films by plasma-enhanced atomic layer deposition
33	Tunable band gap of III-Nitride alloys obtained by Plasma Enhanced Atomic Layer Deposition
34	Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p⁺ Regions
35	Role of plasma properties in controlling crystallinity and phase in oxide films grown by plasma-enhanced atomic layer epitaxy
36	Plasma enhanced atomic layer deposition of gallium sulfide thin films
37	n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
38	Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
39	Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
40	Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
41	Low temperature deposition of Ga₂O₃ thin films using trimethylgallium and oxygen plasma
42	RT Ga₂O₃ atomic layer deposition by using trimethylgallium and water-oxygen plasma
43	Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
44	Protective capping and surface passivation of III-V nanowires by atomic layer deposition