Publication Information

Title: Silicon Surface Passivation by Gallium Oxide Capped With Silicon Nitride

Type: Journal

Info: IEEE J. Photovolt., Vol. 6, No. 4, July 2016, pp. 900-905

Date: 2016-06-01

DOI: http://dx.doi.org/10.1109/JPHOTOV.2016.2566881

Author Information

Name

Institution

The Australian National University

The Australian National University

The Australian National University

Films

Plasma Ga2O3 using Beneq TFS-200

Deposition Temperature = 75C

1445-79-0

7782-44-7

Plasma Al2O3 using Beneq TFS-200

Deposition Temperature = 175C

75-24-1

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Lifetime

Photoconductance

Sinton WCT-120 Lifetime Tester

Substrates

Silicon

Keywords

Passivation

Solar

Notes

905



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