n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
Type:
Journal
Info:
Phys. Status Solidi C 2017, 14, 1700150
Date:
2017-10-09
Author Information
Name | Institution |
---|---|
Alexander S. Gudovskikh | St. Petersburg Academic University |
Alexander V. Uvarov | St. Petersburg Academic University |
Ivan A. Morozov | St. Petersburg Academic University |
Artem I. Baranov | St. Petersburg Academic University |
Dmitry A. Kudryashov | St. Petersburg Academic University |
E.V. Nikitina | St. Petersburg Academic University |
Jean-Paul Kleider | GeePs Group of electrical engineering - Paris |
Films
Plasma GaP
Film/Plasma Properties
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Carrier Concentration
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
Silicon |
Notes
1102 |