n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD

Type:
Journal
Info:
Phys. Status Solidi C 2017, 14, 1700150
Date:
2017-10-09

Author Information

Name Institution
Alexander S. GudovskikhSt. Petersburg Academic University
Alexander V. UvarovSt. Petersburg Academic University
Ivan A. MorozovSt. Petersburg Academic University
Artem I. BaranovSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University
E.V. NikitinaSt. Petersburg Academic University
Jean-Paul KleiderGeePs Group of electrical engineering - Paris

Films

Plasma GaP


Film/Plasma Properties

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence

Characteristic: Carrier Concentration
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Silicon

Notes

1102