n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
Type:
Journal
Info:
Phys. Status Solidi C 2017, 14, 1700150
Date:
2017-10-09
Author Information
| Name | Institution |
|---|---|
| Alexander S. Gudovskikh | St. Petersburg Academic University |
| Alexander V. Uvarov | St. Petersburg Academic University |
| Ivan A. Morozov | St. Petersburg Academic University |
| Artem I. Baranov | St. Petersburg Academic University |
| Dmitry A. Kudryashov | St. Petersburg Academic University |
| E.V. Nikitina | St. Petersburg Academic University |
| Jean-Paul Kleider | GeePs Group of electrical engineering - Paris |
Films
Plasma GaP
Film/Plasma Properties
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Photoluminescence
Analysis: PL, PhotoLuminescence
Characteristic: Carrier Concentration
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Silicon |
Notes
| 1102 |