Introducing Plasma ALD, LLC's first in-house product.

An economical, compact inductively coupled plasma source.

Ideal for:
  • Plasma-Enhanced Atomic Layer Deposition
  • Thin Film Etch
  • Surface cleaning
  • Surface modification

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Oxford Instruments Plasmalab 100 Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications using Oxford Instruments Plasmalab 100 hardware returned 11 records. If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Influence of PE-ALD of GaP on the Silicon Wafers Quality
2Low temperature plasma enhanced deposition of GaP films on Si substrate
3Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
4Thin film GaP for solar cell application
5Capacitance characterization of GaP/n-Si structures grown by PE-ALD
6Study of GaP/Si Heterojunction Solar Cells
7Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
8n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
9Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
10Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
11Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD