Publication Information

Title:
Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
Type:
Conference Proceedings
Info:
Journal of Physics: Conference Series 917 (2017) 052004
Date:
2017-11-01

Author Information

Name Institution
Alexander V. UvarovSt. Petersburg Academic University
Alexander S. GudovskikhSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University

Films

Plasma GaP


Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy

Characteristic: Resistivity, Sheet Resistance
Analysis: Hall Measurements

Characteristic: Carrier Concentration
Analysis: Hall Measurements

Characteristic: Mobility
Analysis: Hall Measurements

Substrates

Si(100)
Quartz

Keywords

Notes

1093