PH3, Phospine, Phosphane, CAS# 7803-51-2

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
2Low temperature plasma enhanced deposition of GaP films on Si substrate
3Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
4Study of GaP/Si Heterojunction Solar Cells
5Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
6Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
7Capacitance characterization of GaP/n-Si structures grown by PE-ALD
8Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
9Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
10Thin film GaP for solar cell application
11n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
12Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
13Influence of PE-ALD of GaP on the Silicon Wafers Quality