PH3, Phospine, Phosphane, CAS# 7803-51-2

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 13 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
2Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
3Thin film GaP for solar cell application
4Low temperature plasma enhanced deposition of GaP films on Si substrate
5Influence of PE-ALD of GaP on the Silicon Wafers Quality
6Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
7Study of GaP/Si Heterojunction Solar Cells
8Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
9Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
10Capacitance characterization of GaP/n-Si structures grown by PE-ALD
11Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
12Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
13n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD