PH3, Phospine, Phosphane, CAS# 7803-51-2

Plasma Enhanced Atomic Layer Deposition Film Publications

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NumberTitle
1Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
2Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
3Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
4Thin film GaP for solar cell application
5Low temperature plasma enhanced deposition of GaP films on Si substrate
6Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
7Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
8Study of GaP/Si Heterojunction Solar Cells
9n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
10Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
11Capacitance characterization of GaP/n-Si structures grown by PE-ALD
12Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
13Influence of PE-ALD of GaP on the Silicon Wafers Quality