2022 Year in Review

February 2023 Stats


The publication database currently has 1673 entries.
204 Films
279 Precursors
78 Dep Hardware Sets
253 Characteristics
91 Theses
5136 Authors

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2021 Year in Review
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Recent Database Additions
Characterization of thin Al2O3/SiO2 dielectric stack for CMOS transistors Designing Multifunctional Cobalt Oxide Layers for Efficient and Stable Electrochemical Oxygen Evolution Hierarchical Atomic Layer Deposited V2O5 on 3D Printed Nanocarbon Electrodes for High-Performance Aqueous Zinc-Ion Batteries Piezoelectric Properties of Zinc Oxide Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition Experimental and numerical analysis of the effects of ion bombardment in silicon oxide (SiO2) plasma enhanced atomic layer deposition (PEALD) processes

PH3, Phospine, Phosphane, CAS# 7803-51-2

Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for publications using this chemistry returned 13 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Capacitance characterization of GaP/n-Si structures grown by PE-ALD
2Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
3Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
4Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition
5Low temperature plasma enhanced deposition of GaP films on Si substrate
6Study of GaP/Si Heterojunction Solar Cells
7Thin film GaP for solar cell application
8n-GaP/p-Si Heterojunction Solar Cells Fabricated by PE-ALD
9Lateral conductivity of n-GaP/p-Si heterojunction with an inversion layer
10Atomic Layer Deposition of Cobalt Phosphide for Efficient Water Splitting
11Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
12Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
13Influence of PE-ALD of GaP on the Silicon Wafers Quality

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