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Capacitance characterization of GaP/n-Si structures grown by PE-ALD

Type:
Journal
Info:
Journal of Physics: Conference Series 917 (2017) 052027
Date:
2017-11-01
DOI:
http://dx.doi.org/10.1088/1742-6596/917/5/052027

Author Information

Name Institution
Artem I. BaranovSt. Petersburg Academic University
Alexander S. GudovskikhSt. Petersburg Academic University
Arouna DargaGeePs Group of electrical engineering - Paris
Sylvain Le GallGeePs Group of electrical engineering - Paris
Jean-Paul KleiderGeePs Group of electrical engineering - Paris

Films

Plasma GaP

Hardware used: Oxford Instruments Plasmalab 100
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
PH3, Phospine, Phosphane
CAS#: 7803-51-2
Deposition Temperature = 380C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Carrier Concentration
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Damage, Defects
Analysis: DLTS, Deep Level Transient Spectroscopy
Diagnostic: Boonton 7200B Capacitance Bridge

Substrates

Si(100)

Notes

1072