Publication Information

Title:
Capacitance characterization of GaP/n-Si structures grown by PE-ALD
Type:
Journal
Info:
Journal of Physics: Conference Series 917 (2017) 052027
Date:
2017-11-01

Author Information

Name Institution
Artem I. BaranovSt. Petersburg Academic University
Alexander S. GudovskikhSt. Petersburg Academic University
Arouna DargaGeePs Group of electrical engineering - Paris
Sylvain Le GallGeePs Group of electrical engineering - Paris
Jean-Paul KleiderGeePs Group of electrical engineering - Paris

Films

Plasma GaP


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Carrier Concentration
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Damage, Defects
Analysis: DLTS, Deep Level Transient Spectroscopy

Substrates

Si(100)

Keywords

Notes

1072