Publication Information

Title:
Influence of PE-ALD of GaP on the Silicon Wafers Quality
Type:
Journal
Info:
physica status solidi (a) Volume 214, Issue 12, pages 1700685
Date:
2017-10-09

Author Information

Name Institution
Artem I. BaranovSt. Petersburg Academic University
Alexander S. GudovskikhSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University
Ivan A. MorozovSt. Petersburg Academic University
Alexey M. MozharovSt. Petersburg Academic University
E.V. NikitinaSt. Petersburg Academic University
Kirill S. ZelentsovSt. Petersburg Academic University
Arouna DargaGeePs Group of electrical engineering - Paris
S. GallGeePs Group of electrical engineering - Paris
Jean-Paul KleiderGeePs Group of electrical engineering - Paris

Films

Plasma GaP


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Damage, Defects
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Damage, Defects
Analysis: DLTS, Deep Level Transient Spectroscopy

Substrates

Silicon

Keywords

Notes

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