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Influence of PE-ALD of GaP on the Silicon Wafers Quality

Type:
Journal
Info:
physica status solidi (a) Volume 214, Issue 12, pages 1700685
Date:
2017-10-09
DOI:
http://dx.doi.org/10.1002/pssa.201700685

Author Information

Name Institution
Artem I. BaranovSt. Petersburg Academic University
Alexander S. GudovskikhSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University
Ivan A. MorozovSt. Petersburg Academic University
Alexey M. MozharovSt. Petersburg Academic University
E.V. NikitinaSt. Petersburg Academic University
Kirill S. ZelentsovSt. Petersburg Academic University
Arouna DargaGeePs Group of electrical engineering - Paris
S. GallGeePs Group of electrical engineering - Paris
Jean-Paul KleiderGeePs Group of electrical engineering - Paris

Films

Plasma GaP

Hardware used: Oxford Instruments Plasmalab 100
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
PH3, Phospine, Phosphane
CAS#: 7803-51-2
Deposition Temperature = 380C

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Damage, Defects
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: -

Characteristic: Damage, Defects
Analysis: DLTS, Deep Level Transient Spectroscopy
Diagnostic: -

Substrates

Silicon

Notes

1092