Influence of PE-ALD of GaP on the Silicon Wafers Quality
Type:
Journal
Info:
physica status solidi (a) Volume 214, Issue 12, pages 1700685
Date:
2017-10-09
Author Information
| Name | Institution |
|---|---|
| Artem I. Baranov | St. Petersburg Academic University |
| Alexander S. Gudovskikh | St. Petersburg Academic University |
| Dmitry A. Kudryashov | St. Petersburg Academic University |
| Ivan A. Morozov | St. Petersburg Academic University |
| Alexey M. Mozharov | St. Petersburg Academic University |
| E.V. Nikitina | St. Petersburg Academic University |
| Kirill S. Zelentsov | St. Petersburg Academic University |
| Arouna Darga | GeePs Group of electrical engineering - Paris |
| S. Gall | GeePs Group of electrical engineering - Paris |
| Jean-Paul Kleider | GeePs Group of electrical engineering - Paris |
Films
Plasma GaP
Film/Plasma Properties
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Damage, Defects
Analysis: C-V, Capacitance-Voltage Measurements
Characteristic: Damage, Defects
Analysis: DLTS, Deep Level Transient Spectroscopy
Substrates
| Silicon |
Notes
| 1092 |