The publication database currently has 1613 entries.

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Plasma-enhanced atomic layer deposition of SiO₂ for channel isolation of colloidal quantum dots phototransistors Reaction Mechanisms during Atomic Layer Deposition of AlF₃ Using Al(CH₃)₃ and SF₆ Plasma Effect of Oxygen Source on the Various Properties of SnO₂ Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition

Search 1613 plasma ALD publications by:

202 Films Compositions

272 Precursors and Plasma Gases

77 Deposition Hardwares

249 Film and Plasma Characteristics

Optical emission spectroscopy of gallium phosphide plasma-enhanced atomic layer deposition

Type:

Conference Proceedings

Info:

Journal of Physics: Conf. Series 1038 (2018) 012108

Date:

2018-06-01

DOI:

http://dx.doi.org/10.1088/1742-6596/1038/1/012108

Author Information

Name	Institution
Alexander V. Uvarov	St. Petersburg Academic University
Alexander S. Gudovskikh	St. Petersburg Academic University

Films

Plasma GaP

Hardware used: Oxford Instruments Plasmalab 100

TMG, trimethyl galium, GaMe₃

CAS#: 1445-79-0

Where to buy precursor

PH₃, Phospine, Phosphane

CAS#: 7803-51-2

H₂, Hydrogen

CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Plasma Species

Analysis: OES, Optical Emission Spectroscopy

Diagnostic: Solar Laser Systems S100

Substrates

Keywords

Notes

1467

The publication database currently has 1613 entries.

Search from:

202 Films Compositions

272 Precursors and Plasma Gases

77 Deposition Hardwares

249 Film and Plasma Characteristics

86 Theses