Low temperature plasma enhanced deposition of GaP films on Si substrate

Type:

Journal

Info:

Journal of Vacuum Science & Technology A 36, 021302 (2018)

Date:

2017-11-13

DOI:

http://dx.doi.org/10.1116/1.4999409

Author Information

Name	Institution
Alexander S. Gudovskikh	St. Petersburg Academic University
Ivan A. Morozov	St. Petersburg Academic University
Alexander V. Uvarov	St. Petersburg Academic University
Dmitry A. Kudryashov	St. Petersburg Academic University
E.V. Nikitina	St. Petersburg Academic University
Anton S. Bukatin	St. Petersburg Academic University
Vladimir N. Nevedomskiy	Ioffe Institute
Jean-Paul Kleider	GeePs Group of electrical engineering - Paris

Films

Plasma GaP

Hardware used: Oxford Instruments Plasmalab 100

TMG, trimethyl galium, GaMe₃

CAS#: 1445-79-0

PH₃, Phospine, Phosphane

CAS#: 7803-51-2

Deposition Temperature Range = 250-380C

Film/Plasma Properties

Characteristic: Thickness

Analysis: SEM, Scanning Electron Microscopy

Diagnostic: Zeiss Supra 25

Characteristic: Morphology, Roughness, Topography

Analysis: SEM, Scanning Electron Microscopy

Diagnostic: Zeiss Supra 25

Characteristic: Morphology, Roughness, Topography

Analysis: AFM, Atomic Force Microscopy

Diagnostic: Bruker BioScope Catalyst

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Analysis: Raman Spectroscopy

Diagnostic: Horiba Jobin Yvon LabRAM HR800 Raman Spectroscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Analysis: Electron Diffraction

Diagnostic: JEOL 2100F

Characteristic: Plasma Species

Analysis: OES, Optical Emission Spectroscopy

Diagnostic: Solar Laser Systems S100

Characteristic: Microstructure

Analysis: TEM, Transmission Electron Microscope