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Correlation between ferroelectricity and ferroelectric orthorhombic phase of HfxZr1-xO2 thin films using synchrotron x-ray analysis
Experimental and theoretical determination of the role of ions in atomic layer annealing
Crystalline AlN Interfacial Layer on GaN Using Plasma-Enhanced Atomic Layer Deposition
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
Plasma-Enhanced Atomic Layer Deposition of Nanostructured Gold Near Room Temperature
Low temperature plasma enhanced deposition of GaP films on Si substrate
Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 021302 (2018)
Date:
2017-11-13
Author Information
| Name | Institution |
|---|---|
| Alexander S. Gudovskikh | St. Petersburg Academic University |
| Ivan A. Morozov | St. Petersburg Academic University |
| Alexander V. Uvarov | St. Petersburg Academic University |
| Dmitry A. Kudryashov | St. Petersburg Academic University |
| E.V. Nikitina | St. Petersburg Academic University |
| Anton S. Bukatin | St. Petersburg Academic University |
| Vladimir N. Nevedomskiy | Ioffe Institute |
| Jean-Paul Kleider | GeePs Group of electrical engineering - Paris |
Films
Plasma GaP
Film/Plasma Properties
Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Substrates
| Si(001) |
Keywords
Notes
| 1098 |