Low temperature plasma enhanced deposition of GaP films on Si substrate

Type:
Journal
Info:
Journal of Vacuum Science & Technology A 36, 021302 (2018)
Date:
2017-11-13
DOI:
http://dx.doi.org/10.1116/1.4999409

Author Information

Name Institution
Alexander S. GudovskikhSt. Petersburg Academic University
Ivan A. MorozovSt. Petersburg Academic University
Alexander V. UvarovSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University
E.V. NikitinaSt. Petersburg Academic University
Anton S. BukatinSt. Petersburg Academic University
Vladimir N. NevedomskiyIoffe Institute
Jean-Paul KleiderGeePs Group of electrical engineering - Paris

Films

Plasma GaP

Hardware used: Oxford Instruments Plasmalab 100
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
PH3, Phospine, Phosphane
CAS#: 7803-51-2
Deposition Temperature Range = 250-380C

Film/Plasma Properties

Characteristic: Thickness
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Supra 25

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: Zeiss Supra 25

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: Bruker BioScope Catalyst

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Raman Spectroscopy
Diagnostic: Horiba Jobin Yvon LabRAM HR800 Raman Spectroscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Diagnostic: JEOL 2100F

Characteristic: Plasma Species
Analysis: OES, Optical Emission Spectroscopy
Diagnostic: Solar Laser Systems S100

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: JEOL 2100F

Substrates

Si(001)

Notes

1098