Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD

Type:
Journal
Info:
Journal of Physics: Conference Series 1482 (mar) 012017
Date:
2020-03-01
DOI:
http://dx.doi.org/10.1088/1742-6596/1482/1/012017

Author Information

Name Institution
Artem I. BaranovSt. Petersburg Academic University
Alexander V. UvarovSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University
Ivan A. MorozovSt. Petersburg Academic University
Alexander S. GudovskikhSt. Petersburg Academic University

Films

Plasma GaP

Hardware used: Oxford Instruments Plasmalab 100
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
PH3, Phospine, Phosphane
CAS#: 7803-51-2
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Deposition Temperature Range N/A

Plasma GaP

Hardware used: Oxford Instruments Plasmalab 100
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
PH3, Phospine, Phosphane
CAS#: 7803-51-2
H2, Hydrogen
CAS#: 1333-74-0

Where to buy onsite generators

Ar, Argon
CAS#: 7440-37-1
Deposition Temperature Range N/A

Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent E4980A Precision LCR Meter

Characteristic: Damage, Defects
Analysis: DLTS, Deep Level Transient Spectroscopy
Diagnostic: Boonton 7200B Capacitance Bridge

Substrates

Si(100)

Notes

1477