Publication Information

Title:
Influence of plasma on electrophysical properties of the GaP/n-Si isotype heterojunction grown by PE-ALD
Type:
Journal
Info:
Journal of Physics: Conference Series 1482 (mar) 012017
Date:
2020-03-01

Author Information

Name Institution
Artem I. BaranovSt. Petersburg Academic University
Alexander V. UvarovSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University
Ivan A. MorozovSt. Petersburg Academic University
Alexander S. GudovskikhSt. Petersburg Academic University

Films


Plasma GaP


Film/Plasma Properties

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Damage, Defects
Analysis: DLTS, Deep Level Transient Spectroscopy

Substrates

Si(100)

Keywords

Notes

1477