Low temperature epitaxial growth of GaP on Si by atomic-layer deposition with plasma activation
Type:
Journal
Info:
jun J. Phys. D: Appl. Phys. 53 345105
Date:
2020-04-22
Author Information
| Name | Institution |
|---|---|
| Alexander V. Uvarov | St. Petersburg Academic University |
| Alexander S. Gudovskikh | St. Petersburg Academic University |
| Vladimir N. Nevedomskiy | Ioffe Institute |
| Artem I. Baranov | St. Petersburg Academic University |
| Dmitry A. Kudryashov | St. Petersburg Academic University |
| Ivan A. Morozov | St. Petersburg Academic University |
| Jean-Paul Kleider | GeePs Group of electrical engineering - Paris |
Films
Plasma GaP
Plasma GaP
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: Profilometry
Characteristic: Morphology, Roughness, Topography
Analysis: TEM, Transmission Electron Microscope
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Damage, Defects
Analysis: DLTS, Deep Level Transient Spectroscopy
Substrates
| Si(100) |
Notes
| 1496 |