Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
Type:
Journal
Info:
physica status solidi (a) Volume 216, Issue 10, pages 1800617, 2019
Date:
2018-10-18
Author Information
| Name | Institution |
|---|---|
| Alexander S. Gudovskikh | St. Petersburg Academic University |
| Alexander V. Uvarov | St. Petersburg Academic University |
| Ivan A. Morozov | St. Petersburg Academic University |
| Artem I. Baranov | St. Petersburg Academic University |
| Dmitry A. Kudryashov | St. Petersburg Academic University |
| Kirill S. Zelentsov | St. Petersburg Academic University |
| Alexandre Jaffré | GeePs Group of electrical engineering - Paris |
| Sylvain Le Gall | GeePs Group of electrical engineering - Paris |
| Arouna Darga | GeePs Group of electrical engineering - Paris |
| Aurore Brezard-Oudot | GeePs Group of electrical engineering - Paris |
| Jean-Paul Kleider | GeePs Group of electrical engineering - Paris |
Films
Plasma GaP
Plasma Si:GaP
Film/Plasma Properties
Characteristic: Chemical Composition, Impurities
Analysis: GDOES, Glow Discharge Optical Emission Spectroscopy
Characteristic: Electron Concentration
Analysis: Electrochemical C-V
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Characteristic: Conductance
Analysis: I-V, Current-Voltage Measurements
Characteristic: IQE, Internal Quantum Efficiency
Analysis: Custom
Characteristic: Electron Concentration
Analysis: Hall Measurements
Characteristic: Mobility
Analysis: Hall Measurements
Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements
Substrates
| Si(001) |
Notes
| 1293 |