Publication Information

Title:
Interface Properties of GaP/Si Heterojunction Fabricated by PE-ALD
Type:
Journal
Info:
physica status solidi (a) Volume 216, Issue 10, pages 1800617, 2019
Date:
2018-10-18

Author Information

Name Institution
Alexander S. GudovskikhSt. Petersburg Academic University
Alexander V. UvarovSt. Petersburg Academic University
Ivan A. MorozovSt. Petersburg Academic University
Artem I. BaranovSt. Petersburg Academic University
Dmitry A. KudryashovSt. Petersburg Academic University
Kirill S. ZelentsovSt. Petersburg Academic University
Alexandre JaffréGeePs Group of electrical engineering - Paris
Sylvain Le GallGeePs Group of electrical engineering - Paris
Arouna DargaGeePs Group of electrical engineering - Paris
Aurore Brezard-OudotGeePs Group of electrical engineering - Paris
Jean-Paul KleiderGeePs Group of electrical engineering - Paris

Films

Plasma GaP


Plasma Si:GaP


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: GDOES, Glow Discharge Optical Emission Spectroscopy

Characteristic: Electron Concentration
Analysis: Electrochemical C-V

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Characteristic: Conductance
Analysis: I-V, Current-Voltage Measurements

Characteristic: IQE, Internal Quantum Efficiency
Analysis: Custom

Characteristic: Electron Concentration
Analysis: Hall Measurements

Characteristic: Mobility
Analysis: Hall Measurements

Characteristic: Capacitance
Analysis: C-V, Capacitance-Voltage Measurements

Substrates

Si(001)

Keywords

Solar

Notes

1293