Publication Information

Title:
Atomic layer epitaxy of gallium arsenide with the use of atomic hydrogen
Type:
Journal
Info:
Applied Physics Letters 58, 1187-1189 (1991)
Date:
1990-12-13

Author Information

Name Institution
M. de KeijserPhilips
C. van OpdorpPhilips

Films

Plasma GaAs


Film/Plasma Properties

Characteristic: Thickness
Analysis: Profilometry

Characteristic: Chemical Composition, Impurities
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Substrates

Keywords

Notes

1468