Publication Information

Title:
Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
Type:
Journal
Info:
Materials Letters, Volume 237, Pages 105 - 108
Date:
2018-11-04

Author Information

Name Institution
Fengfeng ShiBeijing University of Technology
Jun HanBeijing University of Technology
Yanhui XingBeijing University of Technology
Junshuai LiSuzhou Institute of Nano-Tech and Nano-Bionics
Li ZhangSuzhou Institute of Nano-Tech and Nano-Bionics
Tao HeSuzhou Institute of Nano-Tech and Nano-Bionics
Tao LiBeijing University of Technology
Xuguang DengSuzhou Institute of Nano-Tech and Nano-Bionics
Xiaodong ZhangSuzhou Institute of Nano-Tech and Nano-Bionics
Baoshun ZhangSuzhou Institute of Nano-Tech and Nano-Bionics

Films

Plasma Ga2O3

Hardware used: Unknown


CAS#: 7782-44-7

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Transmittance
Analysis: UV-VIS Spectroscopy

Substrates

Sapphire

Keywords

Notes

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