Publication Information

Title: Effect of postdeposition annealing on the electrical properties of beta-Ga2O3 thin films grown on p-Si by plasma-enhanced atomic layer deposition

Type: Journal

Info: J. Vac. Sci. Technol. A 32(4), Jul/Aug 2014

Date: 2014-04-28

DOI: http://dx.doi.org/10.1116/1.4875935

Author Information

Name

Institution

Cankiri Karatekin University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range = 25-400C

1445-79-0

7782-44-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Compositional Depth Profiling

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Electron Diffraction

FEI Tecnai G2 F30

Microstructure

TEM, Transmission Electron Microscope

FEI Tecnai G2 F30

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

Anneal

ATV-Unitherm RTA SRO-704

Leakage Current

I-V, Current-Voltage Measurements

-

Breakdown Voltage

I-V, Current-Voltage Measurements

-

Dielectric Constant, Permittivity

C-V, Capacitance-Voltage Measurements

-

Flat Band Voltage

C-V, Capacitance-Voltage Measurements

-

Threshold Voltage

C-V, Capacitance-Voltage Measurements

-

Effective Oxide Charge, Qeff

C-V, Capacitance-Voltage Measurements

-

Thickness

Ellipsometry

-

Refractive Index

Ellipsometry

-

Substrates

Si(111)

Keywords

Notes

Substrates solvent cleaned.

128



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