Fundamental reaction of RT gallium oxide atomic layer deposition investigated by IR absorption spectroscopy

Type:
Conference Proceedings
Info:
AWAD2014
Date:
2014-06-01
DOI:
https://www.researchgate.net/publication/276275194_Fundamental_reaction_of_RT_gallium_oxide_atomic_layer_deposition_investigated_by_IR_absorption_spectroscopyed by IR absorption spectroscopy

Author Information

Name Institution
P. Pungboon PansilaYamagata University
Kensaku KanomataYamagata University
Shigeru KubotaYamagata University
Bashir AhmmadYamagata University
Fumihiko HiroseYamagata University

Films

Plasma Ga2O3

Hardware used: Unknown
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
H2O, Water
CAS#: 7732-18-5
Deposition Temperature = 25C

Film/Plasma Properties

Characteristic: Deposition Kinetics, Reaction Mechanism
Analysis: IRAS, Infrared Reflection Absorption Spectroscopy
Diagnostic: -

Substrates

Notes

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