Publication Information

Title:
Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions
Type:
Journal
Info:
IEEE Journal of Photovoltaics, Volume:5, Issue: 6, Page(s): 1586 - 1590
Date:
2015-08-25

Author Information

Name Institution
Thomas G. AllenThe Australian National University
M. ErnstThe Australian National University
Christian SamundsettThe Australian National University
Andres CuevasThe Australian National University

Films

Plasma Ga2O3


Film/Plasma Properties

Characteristic: Lifetime
Analysis: Photoconductance

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Surface Defect Density
Analysis: C-V, Capacitance-Voltage Measurements

Characteristic: Efficiency
Analysis: Photoconductance

Characteristic: Open Circuit Voltage
Analysis: -

Characteristic: Optical Bandgap
Analysis: Optical Transmission

Characteristic: Refractive Index
Analysis: Ellipsometry

Substrates

Si(100)
Quartz

Keywords

Solar
Passivation

Notes

Paper available in on-line thesis Addressing optical, recombination and resistive losses in crystalline silicon solar cells
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