Demonstration of c-Si Solar Cells With Gallium Oxide Surface Passivation and Laser-Doped Gallium p+ Regions

Type:
Journal
Info:
IEEE Journal of Photovoltaics, Volume:5, Issue: 6, Page(s): 1586 - 1590
Date:
2015-08-25
DOI:
http://dx.doi.org/10.1109/JPHOTOV.2015.2467968

Author Information

Name Institution
Thomas G. AllenThe Australian National University
M. ErnstThe Australian National University
Christian SamundsettThe Australian National University
Andres CuevasThe Australian National University

Films

Plasma Ga2O3

Hardware used: Beneq TFS-200
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
O2, Oxygen
CAS#: 7782-44-7
Deposition Temperature = 75C

Film/Plasma Properties

Characteristic: Lifetime
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Fixed Charge Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Surface Defect Density
Analysis: C-V, Capacitance-Voltage Measurements
Diagnostic: Agilent 4284A LCR Meter

Characteristic: Efficiency
Analysis: Photoconductance
Diagnostic: Sinton WCT-120 Lifetime Tester

Characteristic: Open Circuit Voltage
Analysis: -
Diagnostic: -

Characteristic: Optical Bandgap
Analysis: Optical Transmission
Diagnostic: Perkin-Elmer lambda 1050 UV/Vis/NIR

Characteristic: Refractive Index
Analysis: Ellipsometry
Diagnostic: J.A. Woollam M-2000D

Substrates

Si(100)
Quartz

Notes

Paper available in on-line thesis Addressing optical, recombination and resistive losses in crystalline silicon solar cells
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