Publication Information

Title:
Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
Type:
Journal
Info:
Thin Solid Films 589 (2015) 47 - 51
Date:
2015-04-23

Author Information

Name Institution
Neeraj NepalU.S. Naval Research Laboratory
Virginia R. AndersonU.S. Naval Research Laboratory
Jennifer K. HiteU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films




Plasma GaN


Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Optical Properties
Analysis: Optical Reflectivity

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Resistivity, Sheet Resistance
Analysis: Two-point Probe

Substrates

Si(111)
Sapphire
GaN

Keywords

Notes

350