Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures

Type:
Journal
Info:
Thin Solid Films 589 (2015) 47 - 51
Date:
2015-04-23
DOI:
http://dx.doi.org/10.1016/j.tsf.2015.04.068

Author Information

Name Institution
Neeraj NepalU.S. Naval Research Laboratory
Virginia R. AndersonU.S. Naval Research Laboratory
Jennifer K. HiteU.S. Naval Research Laboratory
Charles R. Eddy, Jr.U.S. Naval Research Laboratory

Films

Plasma AlInN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 240-300C

Plasma InGaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
In(CH3)3, InMe3, TriMethyl Indium, TMI
CAS#: 3385-78-2
Where to buy precursor
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 240-300C

Plasma AlxGa1-xN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMA, Trimethylaluminum, Trimethylalumane, AlMe3, Al(CH3)3
CAS#: 75-24-1
Where to buy precursor
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature Range = 350-450C

Plasma GaN

Hardware used: Veeco - Ultratech - Cambridge NanoTech Fiji
TMG, trimethyl galium, GaMe3
CAS#: 1445-79-0
Where to buy precursor
N2, Nitrogen
CAS#: 7727-37-9
Deposition Temperature = 400C

Film/Plasma Properties

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Diagnostic: -

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Diagnostic: Rigaku

Characteristic: Optical Properties
Analysis: Optical Reflectivity
Diagnostic: Ocean Optics S2000

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: J.A. Woollam VASE

Characteristic: Resistivity, Sheet Resistance
Analysis: Two-point Probe
Diagnostic: -

Substrates

Si(111)
Sapphire
GaN

Notes

350