GaN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing GaN films returned 41 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
2Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
3Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
4Self-Limiting Growth of GaN at Low Temperatures
5A route to low temperature growth of single crystal GaN on sapphire
6Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
7Layer-by-layer epitaxial growth of GaN at low temperatures
8Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
9Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
10Perspectives on future directions in III-N semiconductor research
11Gallium nitride thin films by microwave plasma-assisted ALD
12Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
13Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
14Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
15Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
16Atomic layer deposition of GaN at low temperatures
17Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
18Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
19Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
20Protective capping and surface passivation of III-V nanowires by atomic layer deposition
21Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
22Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions