GaN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing GaN films returned 41 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
2Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
3Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
4Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
5Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
6Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
7Atomic layer deposition of GaN at low temperatures
8Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
9Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
10Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
11Gallium nitride thin films by microwave plasma-assisted ALD
12Layer-by-layer epitaxial growth of GaN at low temperatures
13Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
14Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
15Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
16Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
17Perspectives on future directions in III-N semiconductor research
18Protective capping and surface passivation of III-V nanowires by atomic layer deposition
19Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
20Self-Limiting Growth of GaN at Low Temperatures
21A route to low temperature growth of single crystal GaN on sapphire
22Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source