GaN Plasma Enhanced Atomic Layer Deposition Film Publications

Your search for plasma enhanced atomic layer deposition publications discussing GaN films returned 38 record(s). If there are too many results, you may want to use the multi-factor search to narrow the results.

NumberTitle
1A route to low temperature growth of single crystal GaN on sapphire
2Atomic layer deposition of GaN at low temperatures
3Baking and plasma pretreatment of sapphire surfaces as a way to facilitate the epitaxial plasma-enhanced atomic layer deposition of GaN thin films
4Electron Enhanced Growth of Crystalline Gallium Nitride Thin Films at Room Temperature and 100°C Using Sequential Surface Reactions
5Growth and characterization of III-N ternary thin films by plasma assisted atomic layer epitaxy at low temperatures
6Growth kinetics for temperature-controlled atomic layer deposition of GaN using trimethylgallium and remote-plasma-excited NH3
7Infrared study on low temperature atomic layer deposition of GaN using trimethylgallium and plasma-excited ammonia
8Layer-by-layer epitaxial growth of GaN at low temperatures
9Low temperature depositions of GaN thin films by plasma-enhanced atomic layer deposition
10Low-Temperature Self-Limiting Growth of III-Nitride Thin Films by Plasma-Enhanced Atomic Layer Deposition
11Perspectives on future directions in III-N semiconductor research
12Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
13Protective capping and surface passivation of III-V nanowires by atomic layer deposition
14Self-Limiting Growth of GaN at Low Temperatures
15Self-limiting growth of GaN using plasma-enhanced atomic layer deposition
16Structure-property relationship and interfacial phenomena in GaN grown on C-plane sapphire via plasma-enhanced atomic layer deposition
17Temperature-controlled atomic layer deposition of GaN using plasma-excited nitrogen source
18Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs
19Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition