
Layer-by-layer epitaxial growth of GaN at low temperatures
Type:
Conference Proceedings
Info:
Thin Solid Films 225 (1993) 244 - 249
Date:
1992-06-02
Author Information
Name | Institution |
---|---|
J. Sumakeris | North Carolina State University |
Z. Sitar | North Carolina State University |
K.S. Ailey-Trent | North Carolina State University |
K.L. More | Oak Ridge National Laboratory |
R. F. Davis | North Carolina State University |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Substrates
SiC |
Notes
1407 |