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Layer-by-layer epitaxial growth of GaN at low temperatures

Type:
Conference Proceedings
Info:
Thin Solid Films 225 (1993) 244 - 249
Date:
1992-06-02
DOI:
https://doi.org/10.1016/0040-6090(93)90163-J

Author Information

Name Institution
J. SumakerisNorth Carolina State University
Z. SitarNorth Carolina State University
K.S. Ailey-TrentNorth Carolina State University
K.L. MoreOak Ridge National Laboratory
R. F. DavisNorth Carolina State University

Films

Plasma GaN

Hardware used: Custom Hot-wire
TEG, triethyl galium, GaEt3
CAS#: 1115-99-7
NH3, Ammonia
CAS#: 7664-41-7
Deposition Temperature Range = 150-650C

Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Diagnostic: -

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Diagnostic: -

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Diagnostic: -

Characteristic: Thickness
Analysis: Ellipsometry
Diagnostic: -

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Diagnostic: -

Substrates

SiC

Notes

1407