The publication database currently has 1700 entries.
Use Advanced Search for more complex searches
Innatiux is a retained executive recruiting firm with a focus on the search and placement of proven leaders for client companies in the field of high-tech capital equipment and analytical instrumentation. We are seeking WW technical and business leaders with a background in semiconductor deposition to fill confidential senior and executive level positions with our clients. Visit us at: www.innatiux.com
Layer-by-layer epitaxial growth of GaN at low temperatures
Type:
Conference Proceedings
Info:
Thin Solid Films 225 (1993) 244 - 249
Date:
1992-06-02
Author Information
| Name | Institution |
|---|---|
| J. Sumakeris | North Carolina State University |
| Z. Sitar | North Carolina State University |
| K.S. Ailey-Trent | North Carolina State University |
| K.L. More | Oak Ridge National Laboratory |
| R. F. Davis | North Carolina State University |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction
Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope
Substrates
| SiC |
Notes
| 1407 |