Publication Information

Title:
Layer-by-layer epitaxial growth of GaN at low temperatures
Type:
Conference Proceedings
Info:
Thin Solid Films 225 (1993) 244 - 249
Date:
1992-06-02

Author Information

Name Institution
J. SumakerisNorth Carolina State University
Z. SitarNorth Carolina State University
K.S. Ailey-TrentNorth Carolina State University
K.L. MoreOak Ridge National Laboratory
R. F. DavisNorth Carolina State University

Films

Plasma GaN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: RHEED, Reflection High-Energy Electron Diffraction

Characteristic: Compositional Depth Profiling
Analysis: AES, Auger Electron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: SEM, Scanning Electron Microscopy

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Microstructure
Analysis: TEM, Transmission Electron Microscope

Substrates

SiC

Keywords

Notes

1407