Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition
Type:
Journal
Info:
J. Mater. Chem. C, 2020, 8, 8457-8465
Date:
2020-05-22
Author Information
| Name | Institution |
|---|---|
| Polla Rouf | Linköping University |
| Nathan J. O'Brien | Linköping University |
| Sydney C. Buttera | Carleton University |
| Ivan Martinovic | Linköping University |
| Babak Bakhit | Linköping University |
| Erik Martinsson | Linköping University |
| Justinas Palisaitis | Linköping University |
| Chih-Wei Hsu | Linköping University |
| Henrik Pedersen | Linköping University |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Stress
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Strain
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction
Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Optical Absorption
Analysis: Optical Absorption
Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry
Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis
Characteristic: Images
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction
Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis
Characteristic: Precursor Characterization
Analysis: DSC, Differential Scanning Calorimetry
Substrates
| Si(100) |
| 4H n-SiC(0001) |
Notes
| 1667 |