Epitaxial GaN using Ga(NMe2)3 and NH3 plasma by atomic layer deposition

Type:
Journal
Info:
J. Mater. Chem. C, 2020, 8, 8457-8465
Date:
2020-05-22

Author Information

Name Institution
Polla RoufLinköping University
Nathan J. O'BrienLinköping University
Sydney C. ButteraCarleton University
Ivan MartinovicLinköping University
Babak BakhitLinköping University
Erik MartinssonLinköping University
Justinas PalisaitisLinköping University
Chih-Wei HsuLinköping University
Henrik PedersenLinköping University

Films

Plasma GaN


Film/Plasma Properties

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Stress
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Strain
Analysis: GIXRD, Grazing Incidence X-Ray Diffraction

Characteristic: Thickness
Analysis: XRR, X-Ray Reflectivity

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Chemical Binding
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Optical Absorption
Analysis: Optical Absorption

Characteristic: Chemical Composition, Impurities
Analysis: RBS, Rutherford Backscattering Spectrometry

Characteristic: Chemical Composition, Impurities
Analysis: TOF-ERDA, Time-Of-Flight Elastic Recoil Detection Analysis

Characteristic: Images
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: Electron Diffraction

Characteristic: Precursor Characterization
Analysis: TGA, Thermo Gravimetric Analysis

Characteristic: Precursor Characterization
Analysis: DSC, Differential Scanning Calorimetry

Substrates

Si(100)
4H n-SiC(0001)

Notes

1667