Publication Information

Title: Atomic layer deposition of GaN at low temperatures

Type: Journal

Info: J. Vac. Sci. Technol. A 30(1), Jan/Feb 2012

Date: 2011-12-01

DOI: http://dx.doi.org/10.1116/1.3664102

Author Information

Name

Institution

Bilkent University

Bilkent University

Bilkent University

Bilkent University

Films

Deposition Temperature Range = 100-500C

1445-79-0

7664-41-7

Film/Plasma Properties

Characteristic

Analysis

Diagnostic

Thickness

Ellipsometry

J.A. Woollam VASE

Chemical Composition, Impurities

XPS, X-ray Photoelectron Spectroscopy

Thermo Scientific K-Alpha

Crystallinity, Crystal Structure, Grain Size, Atomic Structure

GIXRD, Grazing Incidence X-Ray Diffraction

PANalytical Xpert PRO MRD X-ray Diffractometer

Thickness

TEM, Transmission Electron Microscope

FEI Tecnai G2 F30

Microstructure

TEM, Transmission Electron Microscope

FEI Tecnai G2 F30

Morphology, Roughness, Topography

AFM, Atomic Force Microscopy

Asylum Research MFP-3D

Substrates

Silicon

Keywords

GaN

Notes

Silicon substrates solvent cleaned + HF dip + DI rinse + N2 dry.

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