Publication Information

Title:
Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
Type:
Journal
Info:
Nanotechnology 26 (2015) 014002 (7pp)
Date:
2014-09-29

Author Information

Name Institution
Huan-Yu ShihNational Taiwan University
Ming-Chih LinTaiwan Textile Research Institute
Liang-Yih ChenNational Taiwan University of Science and Technology
Miin-Jang ChenNational Taiwan University

Films

Plasma GaN


Film/Plasma Properties

Characteristic: Thickness
Analysis: Ellipsometry

Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope

Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction

Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy

Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy

Substrates

Si(100)

Keywords

PEALD Film Development

Notes

Ultratech Fiji PEALD GaN film development.
199