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Uniform GaN thin films grown on (100) silicon by remote plasma atomic layer deposition
Type:
Journal
Info:
Nanotechnology 26 (2015) 014002 (7pp)
Date:
2014-09-29
Author Information
| Name | Institution |
|---|---|
| Huan-Yu Shih | National Taiwan University |
| Ming-Chih Lin | Taiwan Textile Research Institute |
| Liang-Yih Chen | National Taiwan University of Science and Technology |
| Miin-Jang Chen | National Taiwan University |
Films
Plasma GaN
Film/Plasma Properties
Characteristic: Thickness
Analysis: Ellipsometry
Characteristic: Thickness
Analysis: TEM, Transmission Electron Microscope
Characteristic: Crystallinity, Crystal Structure, Grain Size, Atomic Structure
Analysis: XRD, X-Ray Diffraction
Characteristic: Chemical Composition, Impurities
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Bonding States
Analysis: XPS, X-ray Photoelectron Spectroscopy
Characteristic: Morphology, Roughness, Topography
Analysis: AFM, Atomic Force Microscopy
Substrates
| Si(100) |
Notes
| Ultratech Fiji PEALD GaN film development. |
| 199 |